diff options
Diffstat (limited to 'src/gpuwattch/technology_xeon_core.cc')
| -rw-r--r-- | src/gpuwattch/technology_xeon_core.cc | 3272 |
1 files changed, 1748 insertions, 1524 deletions
diff --git a/src/gpuwattch/technology_xeon_core.cc b/src/gpuwattch/technology_xeon_core.cc index ef16087..11bb28e 100644 --- a/src/gpuwattch/technology_xeon_core.cc +++ b/src/gpuwattch/technology_xeon_core.cc @@ -29,57 +29,64 @@ * ***************************************************************************/ - #include "basic_circuit.h" #include "parameter.h" -double wire_resistance(double resistivity, double wire_width, double wire_thickness, - double barrier_thickness, double dishing_thickness, double alpha_scatter) -{ +double wire_resistance(double resistivity, double wire_width, + double wire_thickness, double barrier_thickness, + double dishing_thickness, double alpha_scatter) { double resistance; - resistance = alpha_scatter * resistivity /((wire_thickness - barrier_thickness - dishing_thickness)*(wire_width - 2 * barrier_thickness)); - return(resistance); + resistance = alpha_scatter * resistivity / + ((wire_thickness - barrier_thickness - dishing_thickness) * + (wire_width - 2 * barrier_thickness)); + return (resistance); } -double wire_capacitance(double wire_width, double wire_thickness, double wire_spacing, - double ild_thickness, double miller_value, double horiz_dielectric_constant, - double vert_dielectric_constant, double fringe_cap) -{ +double wire_capacitance(double wire_width, double wire_thickness, + double wire_spacing, double ild_thickness, + double miller_value, double horiz_dielectric_constant, + double vert_dielectric_constant, double fringe_cap) { double vertical_cap, sidewall_cap, total_cap; - vertical_cap = 2 * PERMITTIVITY_FREE_SPACE * vert_dielectric_constant * wire_width / ild_thickness; - sidewall_cap = 2 * PERMITTIVITY_FREE_SPACE * miller_value * horiz_dielectric_constant * wire_thickness / wire_spacing; + vertical_cap = 2 * PERMITTIVITY_FREE_SPACE * vert_dielectric_constant * + wire_width / ild_thickness; + sidewall_cap = 2 * PERMITTIVITY_FREE_SPACE * miller_value * + horiz_dielectric_constant * wire_thickness / wire_spacing; total_cap = vertical_cap + sidewall_cap + fringe_cap; - return(total_cap); + return (total_cap); } - -void init_tech_params(double technology, bool is_tag) -{ - int iter, tech, tech_lo, tech_hi; +void init_tech_params(double technology, bool is_tag) { + int iter, tech, tech_lo, tech_hi; double curr_alpha, curr_vpp; - double wire_width, wire_thickness, wire_spacing, - fringe_cap, pmos_to_nmos_sizing_r; -// double aspect_ratio,ild_thickness, miller_value = 1.5, horiz_dielectric_constant, vert_dielectric_constant; + double wire_width, wire_thickness, wire_spacing, fringe_cap, + pmos_to_nmos_sizing_r; + // double aspect_ratio,ild_thickness, miller_value = 1.5, + // horiz_dielectric_constant, vert_dielectric_constant; double barrier_thickness, dishing_thickness, alpha_scatter; - double curr_vdd_dram_cell, curr_v_th_dram_access_transistor, curr_I_on_dram_cell, curr_c_dram_cell; + double curr_vdd_dram_cell, curr_v_th_dram_access_transistor, + curr_I_on_dram_cell, curr_c_dram_cell; - uint32_t ram_cell_tech_type = (is_tag) ? g_ip->tag_arr_ram_cell_tech_type : g_ip->data_arr_ram_cell_tech_type; - uint32_t peri_global_tech_type = (is_tag) ? g_ip->tag_arr_peri_global_tech_type : g_ip->data_arr_peri_global_tech_type; + uint32_t ram_cell_tech_type = (is_tag) ? g_ip->tag_arr_ram_cell_tech_type + : g_ip->data_arr_ram_cell_tech_type; + uint32_t peri_global_tech_type = (is_tag) + ? g_ip->tag_arr_peri_global_tech_type + : g_ip->data_arr_peri_global_tech_type; - technology = technology * 1000.0; // in the unit of nm + technology = technology * 1000.0; // in the unit of nm // initialize parameters g_tp.reset(); double gmp_to_gmn_multiplier_periph_global = 0; double curr_Wmemcella_dram, curr_Wmemcellpmos_dram, curr_Wmemcellnmos_dram, - curr_area_cell_dram, curr_asp_ratio_cell_dram, curr_Wmemcella_sram, - curr_Wmemcellpmos_sram, curr_Wmemcellnmos_sram, curr_area_cell_sram, - curr_asp_ratio_cell_sram, curr_I_off_dram_cell_worst_case_length_temp; - double curr_Wmemcella_cam, curr_Wmemcellpmos_cam, curr_Wmemcellnmos_cam, curr_area_cell_cam,//Sheng: CAM data - curr_asp_ratio_cell_cam; - double SENSE_AMP_D, SENSE_AMP_P; // J + curr_area_cell_dram, curr_asp_ratio_cell_dram, curr_Wmemcella_sram, + curr_Wmemcellpmos_sram, curr_Wmemcellnmos_sram, curr_area_cell_sram, + curr_asp_ratio_cell_sram, curr_I_off_dram_cell_worst_case_length_temp; + double curr_Wmemcella_cam, curr_Wmemcellpmos_cam, curr_Wmemcellnmos_cam, + curr_area_cell_cam, // Sheng: CAM data + curr_asp_ratio_cell_cam; + double SENSE_AMP_D, SENSE_AMP_P; // J double area_cell_dram = 0; double asp_ratio_cell_dram = 0; double area_cell_sram = 0; @@ -91,77 +98,63 @@ void init_tech_params(double technology, bool is_tag) double nmos_effective_resistance_multiplier; double width_dram_access_transistor; - double curr_logic_scaling_co_eff = 0;//This is based on the reported numbers of Intel Merom 65nm, Penryn45nm and IBM cell 90/65/45 date - double curr_core_tx_density = 0;//this is density per um^2; 90, ...22nm based on Intel Penryn + double curr_logic_scaling_co_eff = + 0; // This is based on the reported numbers of Intel Merom 65nm, + // Penryn45nm and IBM cell 90/65/45 date + double curr_core_tx_density = + 0; // this is density per um^2; 90, ...22nm based on Intel Penryn double curr_chip_layout_overhead = 0; double curr_macro_layout_overhead = 0; double curr_sckt_co_eff = 0; - if (technology < 91 && technology > 89) - { + if (technology < 91 && technology > 89) { tech_lo = 90; tech_hi = 90; - } - else if (technology < 66 && technology > 64) - { + } else if (technology < 66 && technology > 64) { tech_lo = 65; tech_hi = 65; - } - else if (technology < 46 && technology > 44) - { + } else if (technology < 46 && technology > 44) { tech_lo = 45; tech_hi = 45; - } - else if (technology < 33 && technology > 31) - { + } else if (technology < 33 && technology > 31) { tech_lo = 32; tech_hi = 32; - } - else if (technology < 23 && technology > 21) - { + } else if (technology < 23 && technology > 21) { tech_lo = 22; tech_hi = 22; - if (ram_cell_tech_type == 3) - { - cout<<"current version does not support eDRAM technologies at 22nm"<<endl; - exit(0); + if (ram_cell_tech_type == 3) { + cout << "current version does not support eDRAM technologies at 22nm" + << endl; + exit(0); } } -// else if (technology < 17 && technology > 15) -// { -// tech_lo = 16; -// tech_hi = 16; -// } - else if (technology < 90 && technology > 65) - { + // else if (technology < 17 && technology > 15) + // { + // tech_lo = 16; + // tech_hi = 16; + // } + else if (technology < 90 && technology > 65) { tech_lo = 90; tech_hi = 65; - } - else if (technology < 65 && technology > 45) - { + } else if (technology < 65 && technology > 45) { tech_lo = 65; tech_hi = 45; - } - else if (technology < 45 && technology > 32) - { + } else if (technology < 45 && technology > 32) { tech_lo = 45; tech_hi = 32; + } else if (technology < 32 && technology > 22) { + tech_lo = 32; + tech_hi = 22; + } + // else if (technology < 22 && technology > 16) + // { + // tech_lo = 22; + // tech_hi = 16; + // } + else { + cout << "Invalid technology nodes" << endl; + exit(0); } - else if (technology < 32 && technology > 22) - { - tech_lo = 32; - tech_hi = 22; - } -// else if (technology < 22 && technology > 16) -// { -// tech_lo = 22; -// tech_hi = 16; -// } - else - { - cout<<"Invalid technology nodes"<<endl; - exit(0); - } double vdd[NUMBER_TECH_FLAVORS]; double Lphy[NUMBER_TECH_FLAVORS]; @@ -181,66 +174,59 @@ void init_tech_params(double technology, bool is_tag) double n_to_p_eff_curr_drv_ratio[NUMBER_TECH_FLAVORS]; double I_off_n[NUMBER_TECH_FLAVORS][101]; double I_g_on_n[NUMBER_TECH_FLAVORS][101]; - //double I_off_p[NUMBER_TECH_FLAVORS][101]; + // double I_off_p[NUMBER_TECH_FLAVORS][101]; double gmp_to_gmn_multiplier[NUMBER_TECH_FLAVORS]; - //double curr_sckt_co_eff[NUMBER_TECH_FLAVORS]; + // double curr_sckt_co_eff[NUMBER_TECH_FLAVORS]; double long_channel_leakage_reduction[NUMBER_TECH_FLAVORS]; - for (iter = 0; iter <= 1; ++iter) - { + for (iter = 0; iter <= 1; ++iter) { // linear interpolation - if (iter == 0) - { + if (iter == 0) { tech = tech_lo; - if (tech_lo == tech_hi) - { + if (tech_lo == tech_hi) { curr_alpha = 1; + } else { + curr_alpha = (technology - tech_hi) / (tech_lo - tech_hi); } - else - { - curr_alpha = (technology - tech_hi)/(tech_lo - tech_hi); - } - } - else - { + } else { tech = tech_hi; - if (tech_lo == tech_hi) - { + if (tech_lo == tech_hi) { break; - } - else - { - curr_alpha = (tech_lo - technology)/(tech_lo - tech_hi); + } else { + curr_alpha = (tech_lo - technology) / (tech_lo - tech_hi); } } - if (tech == 90) - { - SENSE_AMP_D = .28e-9; // s - SENSE_AMP_P = 14.7e-15; // J - //90nm technology-node. Corresponds to year 2004 in ITRS - //ITRS HP device type - vdd[0] = 1.2; - Lphy[0] = 0.037;//Lphy is the physical gate-length. micron - Lelec[0] = 0.0266;//Lelec is the electrical gate-length. micron - t_ox[0] = 1.2e-3;//micron - v_th[0] = 0.23707;//V - c_ox[0] = 1.79e-14;//F/micron2 - mobility_eff[0] = 342.16 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs - Vdsat[0] = 0.128; //V - c_g_ideal[0] = 6.64e-16;//F/micron - c_fringe[0] = 0.08e-15;//F/micron - c_junc[0] = 1e-15;//F/micron2 - I_on_n[0] = 1076.9e-6;//A/micron - I_on_p[0] = 712.6e-6;//A/micron - //Note that nmos_effective_resistance_multiplier, n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier values are calculated offline + if (tech == 90) { + SENSE_AMP_D = .28e-9; // s + SENSE_AMP_P = 14.7e-15; // J + // 90nm technology-node. Corresponds to year 2004 in ITRS + // ITRS HP device type + vdd[0] = 1.2; + Lphy[0] = 0.037; // Lphy is the physical gate-length. micron + Lelec[0] = 0.0266; // Lelec is the electrical gate-length. micron + t_ox[0] = 1.2e-3; // micron + v_th[0] = 0.23707; // V + c_ox[0] = 1.79e-14; // F/micron2 + mobility_eff[0] = 342.16 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[0] = 0.128; // V + c_g_ideal[0] = 6.64e-16; // F/micron + c_fringe[0] = 0.08e-15; // F/micron + c_junc[0] = 1e-15; // F/micron2 + I_on_n[0] = 1076.9e-6; // A/micron + I_on_p[0] = 712.6e-6; // A/micron + // Note that nmos_effective_resistance_multiplier, + // n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier values are + // calculated offline nmos_effective_resistance_multiplier = 1.54; n_to_p_eff_curr_drv_ratio[0] = 2.45; gmp_to_gmn_multiplier[0] = 1.22; - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron - Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0];//ohm-micron + Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / + I_on_n[0]; // ohm-micron + Rpchannelon[0] = + n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; // ohm-micron long_channel_leakage_reduction[0] = 1; - I_off_n[0][0] = 3.24e-8;//A/micron + I_off_n[0][0] = 3.24e-8; // A/micron I_off_n[0][10] = 4.01e-8; I_off_n[0][20] = 4.90e-8; I_off_n[0][30] = 5.92e-8; @@ -252,7 +238,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[0][90] = 1.43e-7; I_off_n[0][100] = 1.54e-7; - I_g_on_n[0][0] = 1.65e-8;//A/micron + I_g_on_n[0][0] = 1.65e-8; // A/micron I_g_on_n[0][10] = 1.65e-8; I_g_on_n[0][20] = 1.65e-8; I_g_on_n[0][30] = 1.65e-8; @@ -264,27 +250,28 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[0][90] = 1.65e-8; I_g_on_n[0][100] = 1.65e-8; - //ITRS LSTP device type - vdd[1] = 1.3; - Lphy[1] = 0.075; + // ITRS LSTP device type + vdd[1] = 1.3; + Lphy[1] = 0.075; Lelec[1] = 0.0486; - t_ox[1] = 2.2e-3; - v_th[1] = 0.48203; - c_ox[1] = 1.22e-14; + t_ox[1] = 2.2e-3; + v_th[1] = 0.48203; + c_ox[1] = 1.22e-14; mobility_eff[1] = 356.76 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[1] = 0.373; c_g_ideal[1] = 9.15e-16; - c_fringe[1] = 0.08e-15; + c_fringe[1] = 0.08e-15; c_junc[1] = 1e-15; I_on_n[1] = 503.6e-6; I_on_p[1] = 235.1e-6; nmos_effective_resistance_multiplier = 1.92; n_to_p_eff_curr_drv_ratio[1] = 2.44; - gmp_to_gmn_multiplier[1] =0.88; - Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; + gmp_to_gmn_multiplier[1] = 0.88; + Rnchannelon[1] = + nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1]; long_channel_leakage_reduction[1] = 1; - I_off_n[1][0] = 2.81e-12; + I_off_n[1][0] = 2.81e-12; I_off_n[1][10] = 4.76e-12; I_off_n[1][20] = 7.82e-12; I_off_n[1][30] = 1.25e-11; @@ -296,7 +283,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[1][90] = 1.25e-10; I_off_n[1][100] = 1.7e-10; - I_g_on_n[1][0] = 3.87e-11;//A/micron + I_g_on_n[1][0] = 3.87e-11; // A/micron I_g_on_n[1][10] = 3.87e-11; I_g_on_n[1][20] = 3.87e-11; I_g_on_n[1][30] = 3.87e-11; @@ -308,7 +295,7 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[1][90] = 3.87e-11; I_g_on_n[1][100] = 3.87e-11; - //ITRS LOP device type + // ITRS LOP device type vdd[2] = 0.9; Lphy[2] = 0.053; Lelec[2] = 0.0354; @@ -325,7 +312,8 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.77; n_to_p_eff_curr_drv_ratio[2] = 2.54; gmp_to_gmn_multiplier[2] = 0.98; - Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; + Rnchannelon[2] = + nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; Rpchannelon[2] = n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2]; long_channel_leakage_reduction[2] = 1; I_off_n[2][0] = 2.14e-9; @@ -340,7 +328,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[2][90] = 1.52e-8; I_off_n[2][100] = 1.73e-8; - I_g_on_n[2][0] = 4.31e-8;//A/micron + I_g_on_n[2][0] = 4.31e-8; // A/micron I_g_on_n[2][10] = 4.31e-8; I_g_on_n[2][20] = 4.31e-8; I_g_on_n[2][30] = 4.31e-8; @@ -352,9 +340,8 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[2][90] = 4.31e-8; I_g_on_n[2][100] = 4.31e-8; - if (ram_cell_tech_type == lp_dram) - { - //LP-DRAM cell access transistor technology parameters + if (ram_cell_tech_type == lp_dram) { + // LP-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.2; Lphy[3] = 0.12; Lelec[3] = 0.0756; @@ -369,12 +356,12 @@ void init_tech_params(double technology, bool is_tag) curr_asp_ratio_cell_dram = 1.46; curr_c_dram_cell = 20e-15; - //LP-DRAM wordline transistor parameters + // LP-DRAM wordline transistor parameters curr_vpp = 1.6; t_ox[3] = 2.2e-3; v_th[3] = 0.4545; c_ox[3] = 1.22e-14; - mobility_eff[3] = 323.95 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 323.95 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.3; c_g_ideal[3] = 1.47e-15; c_fringe[3] = 0.08e-15; @@ -384,7 +371,8 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.65; n_to_p_eff_curr_drv_ratio[3] = 1.95; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; I_off_n[3][0] = 1.42e-11; @@ -398,10 +386,8 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][80] = 2.57e-10; I_off_n[3][90] = 3.14e-10; I_off_n[3][100] = 3.85e-10; - } - else if (ram_cell_tech_type == comm_dram) - { - //COMM-DRAM cell access transistor technology parameters + } else if (ram_cell_tech_type == comm_dram) { + // COMM-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.6; Lphy[3] = 0.09; Lelec[3] = 0.0576; @@ -412,16 +398,16 @@ void init_tech_params(double technology, bool is_tag) curr_Wmemcella_dram = width_dram_access_transistor; curr_Wmemcellpmos_dram = 0; curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.09*0.09; + curr_area_cell_dram = 6 * 0.09 * 0.09; curr_asp_ratio_cell_dram = 1.5; curr_c_dram_cell = 30e-15; - //COMM-DRAM wordline transistor parameters + // COMM-DRAM wordline transistor parameters curr_vpp = 3.7; t_ox[3] = 5.5e-3; v_th[3] = 1.0; c_ox[3] = 5.65e-15; - mobility_eff[3] = 302.2 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 302.2 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.32; c_g_ideal[3] = 5.08e-16; c_fringe[3] = 0.08e-15; @@ -431,7 +417,8 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.62; n_to_p_eff_curr_drv_ratio[3] = 2.05; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; I_off_n[3][0] = 5.80e-15; @@ -447,126 +434,129 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][100] = 1.67e-12; } - //SRAM cell properties + // SRAM cell properties curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited + // CAM cell properties //TODO: data need to be revisited curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; - curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um;//360 - curr_asp_ratio_cell_cam = 2.92;//2.5 - //Empirical undifferetiated core/FU coefficient - curr_logic_scaling_co_eff = 1; - curr_core_tx_density = 1.25*0.7*0.7; - curr_sckt_co_eff = 1.1539; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb - - + curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; // 360 + curr_asp_ratio_cell_cam = 2.92; // 2.5 + // Empirical undifferetiated core/FU coefficient + curr_logic_scaling_co_eff = 1; + curr_core_tx_density = 1.25 * 0.7 * 0.7; + curr_sckt_co_eff = 1.1539; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb } - if (tech == 65) - { //65nm technology-node. Corresponds to year 2007 in ITRS - //ITRS HP device type -// SENSE_AMP_D = .2e-9; // s -// SENSE_AMP_P = 5.7e-15; // J -// vdd[0] = 1.1; -// Lphy[0] = 0.025; -// Lelec[0] = 0.019; -// t_ox[0] = 1.1e-3; -// v_th[0] = .19491; -// c_ox[0] = 1.88e-14; -// mobility_eff[0] = 436.24 * (1e-2 * 1e6 * 1e-2 * 1e6); -// Vdsat[0] = 7.71e-2; -// c_g_ideal[0] = 4.69e-16; -// c_fringe[0] = 0.077e-15; -// c_junc[0] = 1e-15; -// I_on_n[0] = 1197.2e-6; -// I_on_p[0] = 870.8e-6; -// nmos_effective_resistance_multiplier = 1.50; -// n_to_p_eff_curr_drv_ratio[0] = 2.41; -// gmp_to_gmn_multiplier[0] = 1.38; -// Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0]; -// Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; -// long_channel_leakage_reduction[0] = 1/3.74; -// //Using MASTAR, @380K, increase Lgate until Ion reduces to 90% or Lgate increase by 10%, whichever comes first -// //Ioff(Lgate normal)/Ioff(Lgate long)= 3.74. -// I_off_n[0][0] = 1.96e-7; -// I_off_n[0][10] = 2.29e-7; -// I_off_n[0][20] = 2.66e-7; -// I_off_n[0][30] = 3.05e-7; -// I_off_n[0][40] = 3.49e-7; -// I_off_n[0][50] = 3.95e-7; -// I_off_n[0][60] = 4.45e-7; -// I_off_n[0][70] = 4.97e-7; -// I_off_n[0][80] = 5.48e-7; -// I_off_n[0][90] = 5.94e-7; -// I_off_n[0][100] = 6.3e-7; -// I_g_on_n[0][0] = 4.09e-8;//A/micron -// I_g_on_n[0][10] = 4.09e-8; -// I_g_on_n[0][20] = 4.09e-8; -// I_g_on_n[0][30] = 4.09e-8; -// I_g_on_n[0][40] = 4.09e-8; -// I_g_on_n[0][50] = 4.09e-8; -// I_g_on_n[0][60] = 4.09e-8; -// I_g_on_n[0][70] = 4.09e-8; -// I_g_on_n[0][80] = 4.09e-8; -// I_g_on_n[0][90] = 4.09e-8; -// I_g_on_n[0][100] = 4.09e-8; - - SENSE_AMP_D = .2e-9; // s - SENSE_AMP_P = 5.7e-15; // J - vdd[0] = 1.25; - Lphy[0] = 0.025; - Lelec[0] = 0.019; - t_ox[0] = 1.1e-3; - v_th[0] = .12491; - c_ox[0] = 1.88e-14; - mobility_eff[0] = 409.31 * (1e-2 * 1e6 * 1e-2 * 1e6); - Vdsat[0] = 9.08e-2; - c_g_ideal[0] = 4.72e-16; - c_fringe[0] = 0.08e-15; - c_junc[0] = 1e-15; - I_on_n[0] = 1486.4e-6; - I_on_p[0] = 1131.5e-6; - nmos_effective_resistance_multiplier = 1.57; - n_to_p_eff_curr_drv_ratio[0] = 2; - gmp_to_gmn_multiplier[0] = 1.38; - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0]; - Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; - long_channel_leakage_reduction[0] = 1.0/4.97; - //Using MASTAR, @380K, increase Lgate until Ion reduces to 90% or Lgate increase by 10%, whichever comes first - //Ioff(Lgate normal)/Ioff(Lgate long)= 4.97@Vdd=1.25; (3.74@Vdd=1.1), however, Intel paper suggest the reduction factor is 3. - I_off_n[0][0] = 8.62e-7; - I_off_n[0][10] = 9.08e-7; - I_off_n[0][20] = 9.55e-7; - I_off_n[0][30] = 1.00e-6; - I_off_n[0][40] = 1.05e-6; - I_off_n[0][50] = 1.09e-6; - I_off_n[0][60] = 1.14e-6; - I_off_n[0][70] = 1.18e-6; - I_off_n[0][80] = 1.23e-6; - I_off_n[0][90] = 1.27e-6; - I_off_n[0][100] = 1.31e-6; + if (tech == 65) { // 65nm technology-node. Corresponds to year 2007 in ITRS + // ITRS HP device type + // SENSE_AMP_D = .2e-9; // s + // SENSE_AMP_P = 5.7e-15; // J + // vdd[0] = 1.1; + // Lphy[0] = 0.025; + // Lelec[0] = 0.019; + // t_ox[0] = 1.1e-3; + // v_th[0] = .19491; + // c_ox[0] = 1.88e-14; + // mobility_eff[0] = 436.24 * (1e-2 * 1e6 * 1e-2 * 1e6); + // Vdsat[0] = 7.71e-2; + // c_g_ideal[0] = 4.69e-16; + // c_fringe[0] = 0.077e-15; + // c_junc[0] = 1e-15; + // I_on_n[0] = 1197.2e-6; + // I_on_p[0] = 870.8e-6; + // nmos_effective_resistance_multiplier = 1.50; + // n_to_p_eff_curr_drv_ratio[0] = 2.41; + // gmp_to_gmn_multiplier[0] = 1.38; + // Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / + // I_on_n[0]; + // Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; + // long_channel_leakage_reduction[0] = 1/3.74; + // //Using MASTAR, @380K, increase Lgate until Ion reduces to 90% or + // Lgate increase by 10%, whichever comes first + // //Ioff(Lgate normal)/Ioff(Lgate long)= 3.74. + // I_off_n[0][0] = 1.96e-7; + // I_off_n[0][10] = 2.29e-7; + // I_off_n[0][20] = 2.66e-7; + // I_off_n[0][30] = 3.05e-7; + // I_off_n[0][40] = 3.49e-7; + // I_off_n[0][50] = 3.95e-7; + // I_off_n[0][60] = 4.45e-7; + // I_off_n[0][70] = 4.97e-7; + // I_off_n[0][80] = 5.48e-7; + // I_off_n[0][90] = 5.94e-7; + // I_off_n[0][100] = 6.3e-7; + // I_g_on_n[0][0] = 4.09e-8;//A/micron + // I_g_on_n[0][10] = 4.09e-8; + // I_g_on_n[0][20] = 4.09e-8; + // I_g_on_n[0][30] = 4.09e-8; + // I_g_on_n[0][40] = 4.09e-8; + // I_g_on_n[0][50] = 4.09e-8; + // I_g_on_n[0][60] = 4.09e-8; + // I_g_on_n[0][70] = 4.09e-8; + // I_g_on_n[0][80] = 4.09e-8; + // I_g_on_n[0][90] = 4.09e-8; + // I_g_on_n[0][100] = 4.09e-8; + SENSE_AMP_D = .2e-9; // s + SENSE_AMP_P = 5.7e-15; // J + vdd[0] = 1.25; + Lphy[0] = 0.025; + Lelec[0] = 0.019; + t_ox[0] = 1.1e-3; + v_th[0] = .12491; + c_ox[0] = 1.88e-14; + mobility_eff[0] = 409.31 * (1e-2 * 1e6 * 1e-2 * 1e6); + Vdsat[0] = 9.08e-2; + c_g_ideal[0] = 4.72e-16; + c_fringe[0] = 0.08e-15; + c_junc[0] = 1e-15; + I_on_n[0] = 1486.4e-6; + I_on_p[0] = 1131.5e-6; + nmos_effective_resistance_multiplier = 1.57; + n_to_p_eff_curr_drv_ratio[0] = 2; + gmp_to_gmn_multiplier[0] = 1.38; + Rnchannelon[0] = + nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0]; + Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; + long_channel_leakage_reduction[0] = 1.0 / 4.97; + // Using MASTAR, @380K, increase Lgate until Ion reduces to 90% or Lgate + // increase by 10%, whichever comes first + // Ioff(Lgate normal)/Ioff(Lgate long)= 4.97@Vdd=1.25; (3.74@Vdd=1.1), + // however, Intel paper suggest the reduction factor is 3. + I_off_n[0][0] = 8.62e-7; + I_off_n[0][10] = 9.08e-7; + I_off_n[0][20] = 9.55e-7; + I_off_n[0][30] = 1.00e-6; + I_off_n[0][40] = 1.05e-6; + I_off_n[0][50] = 1.09e-6; + I_off_n[0][60] = 1.14e-6; + I_off_n[0][70] = 1.18e-6; + I_off_n[0][80] = 1.23e-6; + I_off_n[0][90] = 1.27e-6; + I_off_n[0][100] = 1.31e-6; - I_g_on_n[0][0] = 7.02e-8;//A/micron - I_g_on_n[0][10] = 7.02e-8; - I_g_on_n[0][20] = 7.02e-8; - I_g_on_n[0][30] = 7.02e-8; - I_g_on_n[0][40] = 7.02e-8; - I_g_on_n[0][50] = 7.02e-8; - I_g_on_n[0][60] = 7.02e-8; - I_g_on_n[0][70] = 7.02e-8; - I_g_on_n[0][80] = 7.02e-8; - I_g_on_n[0][90] = 7.02e-8; - I_g_on_n[0][100] = 7.02e-8; + I_g_on_n[0][0] = 7.02e-8; // A/micron + I_g_on_n[0][10] = 7.02e-8; + I_g_on_n[0][20] = 7.02e-8; + I_g_on_n[0][30] = 7.02e-8; + I_g_on_n[0][40] = 7.02e-8; + I_g_on_n[0][50] = 7.02e-8; + I_g_on_n[0][60] = 7.02e-8; + I_g_on_n[0][70] = 7.02e-8; + I_g_on_n[0][80] = 7.02e-8; + I_g_on_n[0][90] = 7.02e-8; + I_g_on_n[0][100] = 7.02e-8; - //ITRS LSTP device type + // ITRS LSTP device type vdd[1] = 1.2; Lphy[1] = 0.045; Lelec[1] = 0.0298; @@ -583,9 +573,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.96; n_to_p_eff_curr_drv_ratio[1] = 2.23; gmp_to_gmn_multiplier[1] = 0.99; - Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; + Rnchannelon[1] = + nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1]; - long_channel_leakage_reduction[1] = 1/2.82; + long_channel_leakage_reduction[1] = 1 / 2.82; I_off_n[1][0] = 9.12e-12; I_off_n[1][10] = 1.49e-11; I_off_n[1][20] = 2.36e-11; @@ -598,7 +589,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[1][90] = 2.62e-10; I_off_n[1][100] = 3.21e-10; - I_g_on_n[1][0] = 1.09e-10;//A/micron + I_g_on_n[1][0] = 1.09e-10; // A/micron I_g_on_n[1][10] = 1.09e-10; I_g_on_n[1][20] = 1.09e-10; I_g_on_n[1][30] = 1.09e-10; @@ -610,7 +601,7 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[1][90] = 1.09e-10; I_g_on_n[1][100] = 1.09e-10; - //ITRS LOP device type + // ITRS LOP device type vdd[2] = 0.8; Lphy[2] = 0.032; Lelec[2] = 0.0216; @@ -627,9 +618,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.82; n_to_p_eff_curr_drv_ratio[2] = 2.28; gmp_to_gmn_multiplier[2] = 1.11; - Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; + Rnchannelon[2] = + nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; Rpchannelon[2] = n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2]; - long_channel_leakage_reduction[2] = 1/2.05; + long_channel_leakage_reduction[2] = 1 / 2.05; I_off_n[2][0] = 4.9e-9; I_off_n[2][10] = 6.49e-9; I_off_n[2][20] = 8.45e-9; @@ -642,7 +634,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[2][90] = 3.13e-8; I_off_n[2][100] = 3.42e-8; - I_g_on_n[2][0] = 9.61e-9;//A/micron + I_g_on_n[2][0] = 9.61e-9; // A/micron I_g_on_n[2][10] = 9.61e-9; I_g_on_n[2][20] = 9.61e-9; I_g_on_n[2][30] = 9.61e-9; @@ -654,9 +646,8 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[2][90] = 9.61e-9; I_g_on_n[2][100] = 9.61e-9; - if (ram_cell_tech_type == lp_dram) - { - //LP-DRAM cell access transistor technology parameters + if (ram_cell_tech_type == lp_dram) { + // LP-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.2; Lphy[3] = 0.12; Lelec[3] = 0.0756; @@ -671,25 +662,26 @@ void init_tech_params(double technology, bool is_tag) curr_asp_ratio_cell_dram = 1.46; curr_c_dram_cell = 20e-15; - //LP-DRAM wordline transistor parameters + // LP-DRAM wordline transistor parameters curr_vpp = 1.6; t_ox[3] = 2.2e-3; v_th[3] = 0.43806; c_ox[3] = 1.22e-14; - mobility_eff[3] = 328.32 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 328.32 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.43806; c_g_ideal[3] = 1.46e-15; c_fringe[3] = 0.08e-15; - c_junc[3] = 1e-15 ; + c_junc[3] = 1e-15; I_on_n[3] = 399.8e-6; I_on_p[3] = 243.4e-6; nmos_effective_resistance_multiplier = 1.65; n_to_p_eff_curr_drv_ratio[3] = 2.05; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 2.23e-11; + I_off_n[3][0] = 2.23e-11; I_off_n[3][10] = 3.46e-11; I_off_n[3][20] = 5.24e-11; I_off_n[3][30] = 7.75e-11; @@ -700,10 +692,8 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][80] = 3.63e-10; I_off_n[3][90] = 4.41e-10; I_off_n[3][100] = 5.36e-10; - } - else if (ram_cell_tech_type == comm_dram) - { - //COMM-DRAM cell access transistor technology parameters + } else if (ram_cell_tech_type == comm_dram) { + // COMM-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.3; Lphy[3] = 0.065; Lelec[3] = 0.0426; @@ -714,29 +704,30 @@ void init_tech_params(double technology, bool is_tag) curr_Wmemcella_dram = width_dram_access_transistor; curr_Wmemcellpmos_dram = 0; curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.065*0.065; + curr_area_cell_dram = 6 * 0.065 * 0.065; curr_asp_ratio_cell_dram = 1.5; curr_c_dram_cell = 30e-15; - //COMM-DRAM wordline transistor parameters + // COMM-DRAM wordline transistor parameters curr_vpp = 3.3; t_ox[3] = 5e-3; v_th[3] = 1.0; c_ox[3] = 6.16e-15; - mobility_eff[3] = 303.44 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 303.44 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.385; c_g_ideal[3] = 4e-16; c_fringe[3] = 0.08e-15; - c_junc[3] = 1e-15 ; + c_junc[3] = 1e-15; I_on_n[3] = 1031e-6; I_on_p[3] = I_on_n[3] / 2; nmos_effective_resistance_multiplier = 1.69; n_to_p_eff_curr_drv_ratio[3] = 2.39; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 1.80e-14; + I_off_n[3][0] = 1.80e-14; I_off_n[3][10] = 3.64e-14; I_off_n[3][20] = 7.03e-14; I_off_n[3][30] = 1.31e-13; @@ -749,31 +740,32 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][100] = 3.99e-12; } - //SRAM cell properties + // SRAM cell properties curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited + // CAM cell properties //TODO: data need to be revisited curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_cam = 2.92; - //Empirical undifferetiated core/FU coefficient + // Empirical undifferetiated core/FU coefficient curr_logic_scaling_co_eff = 0.7; - curr_core_tx_density = 1.25*0.7; - curr_sckt_co_eff = 1.1359; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb + curr_core_tx_density = 1.25 * 0.7; + curr_sckt_co_eff = 1.1359; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb } - if (tech == 45) - { //45nm technology-node. Corresponds to year 2010 in ITRS - //ITRS HP device type - SENSE_AMP_D = .04e-9; // s - SENSE_AMP_P = 2.7e-15; // J + if (tech == 45) { // 45nm technology-node. Corresponds to year 2010 in ITRS + // ITRS HP device type + SENSE_AMP_D = .04e-9; // s + SENSE_AMP_P = 2.7e-15; // J vdd[0] = 1.0; Lphy[0] = 0.018; Lelec[0] = 0.01345; @@ -786,15 +778,20 @@ void init_tech_params(double technology, bool is_tag) c_fringe[0] = 0.05e-15; c_junc[0] = 1e-15; I_on_n[0] = 2046.6e-6; - //There are certain problems with the ITRS PMOS numbers in MASTAR for 45nm. So we are using 65nm values of - //n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier for 45nm - I_on_p[0] = I_on_n[0] / 2;//This value is fixed arbitrarily but I_on_p is not being used in CACTI + // There are certain problems with the ITRS PMOS numbers in MASTAR for + // 45nm. So we are using 65nm values of + // n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier for 45nm + I_on_p[0] = I_on_n[0] / 2; // This value is fixed arbitrarily but I_on_p + // is not being used in CACTI nmos_effective_resistance_multiplier = 1.51; n_to_p_eff_curr_drv_ratio[0] = 2.41; gmp_to_gmn_multiplier[0] = 1.38; - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0]; + Rnchannelon[0] = + nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0]; Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; - long_channel_leakage_reduction[0] = 1/3.546;//Using MASTAR, @380K, increase Lgate until Ion reduces to 90%, Ioff(Lgate normal)/Ioff(Lgate long)= 3.74 + long_channel_leakage_reduction[0] = + 1 / 3.546; // Using MASTAR, @380K, increase Lgate until Ion reduces + // to 90%, Ioff(Lgate normal)/Ioff(Lgate long)= 3.74 I_off_n[0][0] = 2.8e-7; I_off_n[0][10] = 3.28e-7; I_off_n[0][20] = 3.81e-7; @@ -807,7 +804,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[0][90] = 8.91e-7; I_off_n[0][100] = 9.84e-7; - I_g_on_n[0][0] = 3.59e-8;//A/micron + I_g_on_n[0][0] = 3.59e-8; // A/micron I_g_on_n[0][10] = 3.59e-8; I_g_on_n[0][20] = 3.59e-8; I_g_on_n[0][30] = 3.59e-8; @@ -819,14 +816,14 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[0][90] = 3.59e-8; I_g_on_n[0][100] = 3.59e-8; - //ITRS LSTP device type + // ITRS LSTP device type vdd[1] = 1.1; - Lphy[1] = 0.028; + Lphy[1] = 0.028; Lelec[1] = 0.0212; t_ox[1] = 1.4e-3; v_th[1] = 0.50245; c_ox[1] = 2.01e-14; - mobility_eff[1] = 363.96 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[1] = 363.96 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[1] = 9.12e-2; c_g_ideal[1] = 5.18e-16; c_fringe[1] = 0.08e-15; @@ -836,9 +833,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.99; n_to_p_eff_curr_drv_ratio[1] = 2.23; gmp_to_gmn_multiplier[1] = 0.99; - Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; + Rnchannelon[1] = + nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1]; - long_channel_leakage_reduction[1] = 1/2.08; + long_channel_leakage_reduction[1] = 1 / 2.08; I_off_n[1][0] = 1.01e-11; I_off_n[1][10] = 1.65e-11; I_off_n[1][20] = 2.62e-11; @@ -851,7 +849,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[1][90] = 3.29e-10; I_off_n[1][100] = 4.1e-10; - I_g_on_n[1][0] = 9.47e-12;//A/micron + I_g_on_n[1][0] = 9.47e-12; // A/micron I_g_on_n[1][10] = 9.47e-12; I_g_on_n[1][20] = 9.47e-12; I_g_on_n[1][30] = 9.47e-12; @@ -863,13 +861,13 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[1][90] = 9.47e-12; I_g_on_n[1][100] = 9.47e-12; - //ITRS LOP device type + // ITRS LOP device type vdd[2] = 0.7; Lphy[2] = 0.022; Lelec[2] = 0.016; t_ox[2] = 0.9e-3; v_th[2] = 0.22599; - c_ox[2] = 2.82e-14;//F/micron2 + c_ox[2] = 2.82e-14; // F/micron2 mobility_eff[2] = 508.9 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[2] = 5.71e-2; c_g_ideal[2] = 6.2e-16; @@ -880,9 +878,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.76; n_to_p_eff_curr_drv_ratio[2] = 2.28; gmp_to_gmn_multiplier[2] = 1.11; - Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; + Rnchannelon[2] = + nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; Rpchannelon[2] = n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2]; - long_channel_leakage_reduction[2] = 1/1.92; + long_channel_leakage_reduction[2] = 1 / 1.92; I_off_n[2][0] = 4.03e-9; I_off_n[2][10] = 5.02e-9; I_off_n[2][20] = 6.18e-9; @@ -895,7 +894,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[2][90] = 1.84e-8; I_off_n[2][100] = 2.03e-8; - I_g_on_n[2][0] = 3.24e-8;//A/micron + I_g_on_n[2][0] = 3.24e-8; // A/micron I_g_on_n[2][10] = 4.01e-8; I_g_on_n[2][20] = 4.90e-8; I_g_on_n[2][30] = 5.92e-8; @@ -907,29 +906,29 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[2][90] = 1.43e-7; I_g_on_n[2][100] = 1.54e-7; - if (ram_cell_tech_type == lp_dram) - { - //LP-DRAM cell access transistor technology parameters + if (ram_cell_tech_type == lp_dram) { + // LP-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.1; Lphy[3] = 0.078; - Lelec[3] = 0.0504;// Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors. + Lelec[3] = 0.0504; // Assume Lelec is 30% lesser than Lphy for DRAM + // access and wordline transistors. curr_v_th_dram_access_transistor = 0.44559; width_dram_access_transistor = 0.079; - curr_I_on_dram_cell = 36e-6;//A + curr_I_on_dram_cell = 36e-6; // A curr_I_off_dram_cell_worst_case_length_temp = 19.5e-12; curr_Wmemcella_dram = width_dram_access_transistor; curr_Wmemcellpmos_dram = 0; - curr_Wmemcellnmos_dram = 0; + curr_Wmemcellnmos_dram = 0; curr_area_cell_dram = width_dram_access_transistor * Lphy[3] * 10.0; curr_asp_ratio_cell_dram = 1.46; curr_c_dram_cell = 20e-15; - //LP-DRAM wordline transistor parameters + // LP-DRAM wordline transistor parameters curr_vpp = 1.5; t_ox[3] = 2.1e-3; v_th[3] = 0.44559; c_ox[3] = 1.41e-14; - mobility_eff[3] = 426.30 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 426.30 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.181; c_g_ideal[3] = 1.10e-15; c_fringe[3] = 0.08e-15; @@ -939,7 +938,8 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.65; n_to_p_eff_curr_drv_ratio[3] = 2.05; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; I_off_n[3][0] = 2.54e-11; @@ -953,25 +953,23 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][80] = 4.26e-10; I_off_n[3][90] = 5.27e-10; I_off_n[3][100] = 6.46e-10; - } - else if (ram_cell_tech_type == comm_dram) - { - //COMM-DRAM cell access transistor technology parameters + } else if (ram_cell_tech_type == comm_dram) { + // COMM-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.1; Lphy[3] = 0.045; Lelec[3] = 0.0298; curr_v_th_dram_access_transistor = 1; width_dram_access_transistor = 0.045; - curr_I_on_dram_cell = 20e-6;//A + curr_I_on_dram_cell = 20e-6; // A curr_I_off_dram_cell_worst_case_length_temp = 1e-15; curr_Wmemcella_dram = width_dram_access_transistor; curr_Wmemcellpmos_dram = 0; - curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.045*0.045; + curr_Wmemcellnmos_dram = 0; + curr_area_cell_dram = 6 * 0.045 * 0.045; curr_asp_ratio_cell_dram = 1.5; curr_c_dram_cell = 30e-15; - //COMM-DRAM wordline transistor parameters + // COMM-DRAM wordline transistor parameters curr_vpp = 2.7; t_ox[3] = 4e-3; v_th[3] = 1.0; @@ -986,7 +984,8 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.69; n_to_p_eff_curr_drv_ratio[3] = 1.95; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; I_off_n[3][0] = 1.31e-14; @@ -1002,34 +1001,35 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][100] = 3.29e-12; } - - //SRAM cell properties + // SRAM cell properties curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited + // CAM cell properties //TODO: data need to be revisited curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_cam = 2.92; - //Empirical undifferetiated core/FU coefficient - curr_logic_scaling_co_eff = 0.7*0.7; - curr_core_tx_density = 1.25; - curr_sckt_co_eff = 1.1387; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb + // Empirical undifferetiated core/FU coefficient + curr_logic_scaling_co_eff = 0.7 * 0.7; + curr_core_tx_density = 1.25; + curr_sckt_co_eff = 1.1387; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb } - if (tech == 32) - { - SENSE_AMP_D = .03e-9; // s - SENSE_AMP_P = 2.16e-15; // J - //For 2013, MPU/ASIC stagger-contacted M1 half-pitch is 32 nm (so this is 32 nm - //technology i.e. FEATURESIZE = 0.032). Using the SOI process numbers for - //HP and LSTP. + if (tech == 32) { + SENSE_AMP_D = .03e-9; // s + SENSE_AMP_P = 2.16e-15; // J + // For 2013, MPU/ASIC stagger-contacted M1 half-pitch is 32 nm (so this is + // 32 nm + // technology i.e. FEATURESIZE = 0.032). Using the SOI process numbers for + // HP and LSTP. vdd[0] = 0.9; Lphy[0] = 0.013; Lelec[0] = 0.01013; @@ -1041,16 +1041,20 @@ void init_tech_params(double technology, bool is_tag) c_g_ideal[0] = 5.34e-16; c_fringe[0] = 0.04e-15; c_junc[0] = 1e-15; - I_on_n[0] = 2211.7e-6; + I_on_n[0] = 2211.7e-6; I_on_p[0] = I_on_n[0] / 2; nmos_effective_resistance_multiplier = 1.49; n_to_p_eff_curr_drv_ratio[0] = 2.41; gmp_to_gmn_multiplier[0] = 1.38; - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron - Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0];//ohm-micron - long_channel_leakage_reduction[0] = 1/3.706; - //Using MASTAR, @300K (380K does not work in MASTAR), increase Lgate until Ion reduces to 95% or Lgate increase by 5% (DG device can only increase by 5%), - //whichever comes first + Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / + I_on_n[0]; // ohm-micron + Rpchannelon[0] = + n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; // ohm-micron + long_channel_leakage_reduction[0] = 1 / 3.706; + // Using MASTAR, @300K (380K does not work in MASTAR), increase Lgate + // until Ion reduces to 95% or Lgate increase by 5% (DG device can only + // increase by 5%), + // whichever comes first I_off_n[0][0] = 1.52e-7; I_off_n[0][10] = 1.55e-7; I_off_n[0][20] = 1.59e-7; @@ -1063,7 +1067,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[0][90] = 2.73e-6; I_off_n[0][100] = 6.1e-6; - I_g_on_n[0][0] = 6.55e-8;//A/micron + I_g_on_n[0][0] = 6.55e-8; // A/micron I_g_on_n[0][10] = 6.55e-8; I_g_on_n[0][20] = 6.55e-8; I_g_on_n[0][30] = 6.55e-8; @@ -1075,27 +1079,27 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[0][90] = 6.55e-8; I_g_on_n[0][100] = 6.55e-8; -// 32 DG -// I_g_on_n[0][0] = 2.71e-9;//A/micron -// I_g_on_n[0][10] = 2.71e-9; -// I_g_on_n[0][20] = 2.71e-9; -// I_g_on_n[0][30] = 2.71e-9; -// I_g_on_n[0][40] = 2.71e-9; -// I_g_on_n[0][50] = 2.71e-9; -// I_g_on_n[0][60] = 2.71e-9; -// I_g_on_n[0][70] = 2.71e-9; -// I_g_on_n[0][80] = 2.71e-9; -// I_g_on_n[0][90] = 2.71e-9; -// I_g_on_n[0][100] = 2.71e-9; + // 32 DG + // I_g_on_n[0][0] = 2.71e-9;//A/micron + // I_g_on_n[0][10] = 2.71e-9; + // I_g_on_n[0][20] = 2.71e-9; + // I_g_on_n[0][30] = 2.71e-9; + // I_g_on_n[0][40] = 2.71e-9; + // I_g_on_n[0][50] = 2.71e-9; + // I_g_on_n[0][60] = 2.71e-9; + // I_g_on_n[0][70] = 2.71e-9; + // I_g_on_n[0][80] = 2.71e-9; + // I_g_on_n[0][90] = 2.71e-9; + // I_g_on_n[0][100] = 2.71e-9; - //LSTP device type + // LSTP device type vdd[1] = 1; Lphy[1] = 0.020; Lelec[1] = 0.0173; t_ox[1] = 1.2e-3; v_th[1] = 0.513; c_ox[1] = 2.29e-14; - mobility_eff[1] = 347.46 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[1] = 347.46 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[1] = 8.64e-2; c_g_ideal[1] = 4.58e-16; c_fringe[1] = 0.053e-15; @@ -1105,9 +1109,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.99; n_to_p_eff_curr_drv_ratio[1] = 2.23; gmp_to_gmn_multiplier[1] = 0.99; - Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; + Rnchannelon[1] = + nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1]; Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1]; - long_channel_leakage_reduction[1] = 1/1.93; + long_channel_leakage_reduction[1] = 1 / 1.93; I_off_n[1][0] = 2.06e-11; I_off_n[1][10] = 3.30e-11; I_off_n[1][20] = 5.15e-11; @@ -1120,7 +1125,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[1][90] = 5.96e-10; I_off_n[1][100] = 7.44e-10; - I_g_on_n[1][0] = 3.73e-11;//A/micron + I_g_on_n[1][0] = 3.73e-11; // A/micron I_g_on_n[1][10] = 3.73e-11; I_g_on_n[1][20] = 3.73e-11; I_g_on_n[1][30] = 3.73e-11; @@ -1132,15 +1137,14 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[1][90] = 3.73e-11; I_g_on_n[1][100] = 3.73e-11; - - //LOP device type + // LOP device type vdd[2] = 0.6; Lphy[2] = 0.016; Lelec[2] = 0.01232; t_ox[2] = 0.9e-3; v_th[2] = 0.24227; c_ox[2] = 2.84e-14; - mobility_eff[2] = 513.52 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[2] = 513.52 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[2] = 4.64e-2; c_g_ideal[2] = 4.54e-16; c_fringe[2] = 0.057e-15; @@ -1150,9 +1154,10 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.73; n_to_p_eff_curr_drv_ratio[2] = 2.28; gmp_to_gmn_multiplier[2] = 1.11; - Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; + Rnchannelon[2] = + nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2]; Rpchannelon[2] = n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2]; - long_channel_leakage_reduction[2] = 1/1.89; + long_channel_leakage_reduction[2] = 1 / 1.89; I_off_n[2][0] = 5.94e-8; I_off_n[2][10] = 7.23e-8; I_off_n[2][20] = 8.7e-8; @@ -1165,7 +1170,7 @@ void init_tech_params(double technology, bool is_tag) I_off_n[2][90] = 2.39e-7; I_off_n[2][100] = 2.63e-7; - I_g_on_n[2][0] = 2.93e-9;//A/micron + I_g_on_n[2][0] = 2.93e-9; // A/micron I_g_on_n[2][10] = 2.93e-9; I_g_on_n[2][20] = 2.93e-9; I_g_on_n[2][30] = 2.93e-9; @@ -1177,12 +1182,12 @@ void init_tech_params(double technology, bool is_tag) I_g_on_n[2][90] = 2.93e-9; I_g_on_n[2][100] = 2.93e-9; - if (ram_cell_tech_type == lp_dram) - { - //LP-DRAM cell access transistor technology parameters + if (ram_cell_tech_type == lp_dram) { + // LP-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.0; Lphy[3] = 0.056; - Lelec[3] = 0.0419;//Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors. + Lelec[3] = 0.0419; // Assume Lelec is 30% lesser than Lphy for DRAM + // access and wordline transistors. curr_v_th_dram_access_transistor = 0.44129; width_dram_access_transistor = 0.056; curr_I_on_dram_cell = 36e-6; @@ -1194,12 +1199,12 @@ void init_tech_params(double technology, bool is_tag) curr_asp_ratio_cell_dram = 1.46; curr_c_dram_cell = 20e-15; - //LP-DRAM wordline transistor parameters + // LP-DRAM wordline transistor parameters curr_vpp = 1.5; t_ox[3] = 2e-3; v_th[3] = 0.44467; c_ox[3] = 1.48e-14; - mobility_eff[3] = 408.12 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 408.12 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.174; c_g_ideal[3] = 7.45e-16; c_fringe[3] = 0.053e-15; @@ -1209,10 +1214,11 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.65; n_to_p_eff_curr_drv_ratio[3] = 2.05; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 3.57e-11; + I_off_n[3][0] = 3.57e-11; I_off_n[3][10] = 5.51e-11; I_off_n[3][20] = 8.27e-11; I_off_n[3][30] = 1.21e-10; @@ -1223,13 +1229,12 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][80] = 5.87e-10; I_off_n[3][90] = 7.29e-10; I_off_n[3][100] = 8.87e-10; - } - else if (ram_cell_tech_type == comm_dram) - { - //COMM-DRAM cell access transistor technology parameters + } else if (ram_cell_tech_type == comm_dram) { + // COMM-DRAM cell access transistor technology parameters curr_vdd_dram_cell = 1.0; Lphy[3] = 0.032; - Lelec[3] = 0.0205;//Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors. + Lelec[3] = 0.0205; // Assume Lelec is 30% lesser than Lphy for DRAM + // access and wordline transistors. curr_v_th_dram_access_transistor = 1; width_dram_access_transistor = 0.032; curr_I_on_dram_cell = 20e-6; @@ -1237,16 +1242,16 @@ void init_tech_params(double technology, bool is_tag) curr_Wmemcella_dram = width_dram_access_transistor; curr_Wmemcellpmos_dram = 0; curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.032*0.032; + curr_area_cell_dram = 6 * 0.032 * 0.032; curr_asp_ratio_cell_dram = 1.5; curr_c_dram_cell = 30e-15; - //COMM-DRAM wordline transistor parameters + // COMM-DRAM wordline transistor parameters curr_vpp = 2.6; t_ox[3] = 4e-3; v_th[3] = 1.0; c_ox[3] = 7.99e-15; - mobility_eff[3] = 380.76 * (1e-2 * 1e6 * 1e-2 * 1e6); + mobility_eff[3] = 380.76 * (1e-2 * 1e6 * 1e-2 * 1e6); Vdsat[3] = 0.129; c_g_ideal[3] = 2.56e-16; c_fringe[3] = 0.053e-15; @@ -1256,10 +1261,11 @@ void init_tech_params(double technology, bool is_tag) nmos_effective_resistance_multiplier = 1.69; n_to_p_eff_curr_drv_ratio[3] = 1.95; gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; + Rnchannelon[3] = + nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3]; Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 3.63e-14; + I_off_n[3][0] = 3.63e-14; I_off_n[3][10] = 7.18e-14; I_off_n[3][20] = 1.36e-13; I_off_n[3][30] = 2.49e-13; @@ -1272,550 +1278,620 @@ void init_tech_params(double technology, bool is_tag) I_off_n[3][100] = 7.16e-12; } - //SRAM cell properties - curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; + // SRAM cell properties + curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; - curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; + curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited + // CAM cell properties //TODO: data need to be revisited curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; curr_asp_ratio_cell_cam = 2.92; - //Empirical undifferetiated core/FU coefficient - curr_logic_scaling_co_eff = 0.7*0.7*0.7; - curr_core_tx_density = 1.25/0.7; - curr_sckt_co_eff = 1.1111; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb + // Empirical undifferetiated core/FU coefficient + curr_logic_scaling_co_eff = 0.7 * 0.7 * 0.7; + curr_core_tx_density = 1.25 / 0.7; + curr_sckt_co_eff = 1.1111; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb } - if(tech == 22){ - //For 2016, MPU/ASIC stagger-contacted M1 half-pitch is 22 nm (so this is 22 nm - //technology i.e. FEATURESIZE = 0.022). Using the DG process numbers for HP. - //22 nm HP - vdd[0] = 0.8; - Lphy[0] = 0.009;//Lphy is the physical gate-length. - Lelec[0] = 0.00468;//Lelec is the electrical gate-length. - t_ox[0] = 0.55e-3;//micron - v_th[0] = 0.1395;//V - c_ox[0] = 3.63e-14;//F/micron2 - mobility_eff[0] = 426.07 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs - Vdsat[0] = 2.33e-2; //V/micron - c_g_ideal[0] = 3.27e-16;//F/micron - c_fringe[0] = 0.06e-15;//F/micron - c_junc[0] = 0;//F/micron2 - I_on_n[0] = 2626.4e-6;//A/micron - I_on_p[0] = I_on_n[0] / 2;//A/micron //This value for I_on_p is not really used. - nmos_effective_resistance_multiplier = 1.45; - n_to_p_eff_curr_drv_ratio[0] = 2; //Wpmos/Wnmos = 2 in 2007 MASTAR. Look in - //"Dynamic" tab of Device workspace. - gmp_to_gmn_multiplier[0] = 1.38; //Just using the 32nm SOI value. - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron - Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0];//ohm-micron - long_channel_leakage_reduction[0] = 1/3.274; - I_off_n[0][0] = 1.52e-7/1.5*1.2;//From 22nm, leakage current are directly from ITRS report rather than MASTAR, since MASTAR has serious bugs there. - I_off_n[0][10] = 1.55e-7/1.5*1.2; - I_off_n[0][20] = 1.59e-7/1.5*1.2; - I_off_n[0][30] = 1.68e-7/1.5*1.2; - I_off_n[0][40] = 1.90e-7/1.5*1.2; - I_off_n[0][50] = 2.69e-7/1.5*1.2; - I_off_n[0][60] = 5.32e-7/1.5*1.2; - I_off_n[0][70] = 1.02e-6/1.5*1.2; - I_off_n[0][80] = 1.62e-6/1.5*1.2; - I_off_n[0][90] = 2.73e-6/1.5*1.2; - I_off_n[0][100] = 6.1e-6/1.5*1.2; - //for 22nm DG HP - I_g_on_n[0][0] = 1.81e-9;//A/micron - I_g_on_n[0][10] = 1.81e-9; - I_g_on_n[0][20] = 1.81e-9; - I_g_on_n[0][30] = 1.81e-9; - I_g_on_n[0][40] = 1.81e-9; - I_g_on_n[0][50] = 1.81e-9; - I_g_on_n[0][60] = 1.81e-9; - I_g_on_n[0][70] = 1.81e-9; - I_g_on_n[0][80] = 1.81e-9; - I_g_on_n[0][90] = 1.81e-9; - I_g_on_n[0][100] = 1.81e-9; + if (tech == 22) { + // For 2016, MPU/ASIC stagger-contacted M1 half-pitch is 22 nm (so this is + // 22 nm + // technology i.e. FEATURESIZE = 0.022). Using the DG process numbers for + // HP. + // 22 nm HP + vdd[0] = 0.8; + Lphy[0] = 0.009; // Lphy is the physical gate-length. + Lelec[0] = 0.00468; // Lelec is the electrical gate-length. + t_ox[0] = 0.55e-3; // micron + v_th[0] = 0.1395; // V + c_ox[0] = 3.63e-14; // F/micron2 + mobility_eff[0] = 426.07 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[0] = 2.33e-2; // V/micron + c_g_ideal[0] = 3.27e-16; // F/micron + c_fringe[0] = 0.06e-15; // F/micron + c_junc[0] = 0; // F/micron2 + I_on_n[0] = 2626.4e-6; // A/micron + I_on_p[0] = I_on_n[0] / + 2; // A/micron //This value for I_on_p is not really used. + nmos_effective_resistance_multiplier = 1.45; + n_to_p_eff_curr_drv_ratio[0] = + 2; // Wpmos/Wnmos = 2 in 2007 MASTAR. Look in + //"Dynamic" tab of Device workspace. + gmp_to_gmn_multiplier[0] = 1.38; // Just using the 32nm SOI value. + Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / + I_on_n[0]; // ohm-micron + Rpchannelon[0] = + n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; // ohm-micron + long_channel_leakage_reduction[0] = 1 / 3.274; + I_off_n[0][0] = 1.52e-7 / 1.5 * 1.2; // From 22nm, leakage current are + // directly from ITRS report rather + // than MASTAR, since MASTAR has + // serious bugs there. + I_off_n[0][10] = 1.55e-7 / 1.5 * 1.2; + I_off_n[0][20] = 1.59e-7 / 1.5 * 1.2; + I_off_n[0][30] = 1.68e-7 / 1.5 * 1.2; + I_off_n[0][40] = 1.90e-7 / 1.5 * 1.2; + I_off_n[0][50] = 2.69e-7 / 1.5 * 1.2; + I_off_n[0][60] = 5.32e-7 / 1.5 * 1.2; + I_off_n[0][70] = 1.02e-6 / 1.5 * 1.2; + I_off_n[0][80] = 1.62e-6 / 1.5 * 1.2; + I_off_n[0][90] = 2.73e-6 / 1.5 * 1.2; + I_off_n[0][100] = 6.1e-6 / 1.5 * 1.2; + // for 22nm DG HP + I_g_on_n[0][0] = 1.81e-9; // A/micron + I_g_on_n[0][10] = 1.81e-9; + I_g_on_n[0][20] = 1.81e-9; + I_g_on_n[0][30] = 1.81e-9; + I_g_on_n[0][40] = 1.81e-9; + I_g_on_n[0][50] = 1.81e-9; + I_g_on_n[0][60] = 1.81e-9; + I_g_on_n[0][70] = 1.81e-9; + I_g_on_n[0][80] = 1.81e-9; + I_g_on_n[0][90] = 1.81e-9; + I_g_on_n[0][100] = 1.81e-9; - //22 nm LSTP DG - vdd[1] = 0.8; - Lphy[1] = 0.014; - Lelec[1] = 0.008;//Lelec is the electrical gate-length. - t_ox[1] = 1.1e-3;//micron - v_th[1] = 0.40126;//V - c_ox[1] = 2.30e-14;//F/micron2 - mobility_eff[1] = 738.09 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs - Vdsat[1] = 6.64e-2; //V/micron - c_g_ideal[1] = 3.22e-16;//F/micron - c_fringe[1] = 0.08e-15; - c_junc[1] = 0;//F/micron2 - I_on_n[1] = 727.6e-6;//A/micron - I_on_p[1] = I_on_n[1] / 2; - nmos_effective_resistance_multiplier = 1.99; - n_to_p_eff_curr_drv_ratio[1] = 2; - gmp_to_gmn_multiplier[1] = 0.99; - Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];//ohm-micron - Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1];//ohm-micron - long_channel_leakage_reduction[1] = 1/1.89; - I_off_n[1][0] = 2.43e-11; - I_off_n[1][10] = 4.85e-11; - I_off_n[1][20] = 9.68e-11; - I_off_n[1][30] = 1.94e-10; - I_off_n[1][40] = 3.87e-10; - I_off_n[1][50] = 7.73e-10; - I_off_n[1][60] = 3.55e-10; - I_off_n[1][70] = 3.09e-9; - I_off_n[1][80] = 6.19e-9; - I_off_n[1][90] = 1.24e-8; - I_off_n[1][100]= 2.48e-8; - - I_g_on_n[1][0] = 4.51e-10;//A/micron - I_g_on_n[1][10] = 4.51e-10; - I_g_on_n[1][20] = 4.51e-10; - I_g_on_n[1][30] = 4.51e-10; - I_g_on_n[1][40] = 4.51e-10; - I_g_on_n[1][50] = 4.51e-10; - I_g_on_n[1][60] = 4.51e-10; - I_g_on_n[1][70] = 4.51e-10; - I_g_on_n[1][80] = 4.51e-10; - I_g_on_n[1][90] = 4.51e-10; - I_g_on_n[1][100] = 4.51e-10; - - //22 nm LOP - vdd[2] = 0.6; - Lphy[2] = 0.011; - Lelec[2] = 0.00604;//Lelec is the electrical gate-length. - t_ox[2] = 0.8e-3;//micron - v_th[2] = 0.2315;//V - c_ox[2] = 2.87e-14;//F/micron2 - mobility_eff[2] = 698.37 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs - Vdsat[2] = 1.81e-2; //V/micron - c_g_ideal[2] = 3.16e-16;//F/micron - c_fringe[2] = 0.08e-15; - c_junc[2] = 0;//F/micron2 This is Cj0 not Cjunc in MASTAR results->Dynamic Tab - I_on_n[2] = 916.1e-6;//A/micron - I_on_p[2] = I_on_n[2] / 2; - nmos_effective_resistance_multiplier = 1.73; - n_to_p_eff_curr_drv_ratio[2] = 2; - gmp_to_gmn_multiplier[2] = 1.11; - Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];//ohm-micron - Rpchannelon[2] = n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2];//ohm-micron - long_channel_leakage_reduction[2] = 1/2.38; - - I_off_n[2][0] = 1.31e-8; - I_off_n[2][10] = 2.60e-8; - I_off_n[2][20] = 5.14e-8; - I_off_n[2][30] = 1.02e-7; - I_off_n[2][40] = 2.02e-7; - I_off_n[2][50] = 3.99e-7; - I_off_n[2][60] = 7.91e-7; - I_off_n[2][70] = 1.09e-6; - I_off_n[2][80] = 2.09e-6; - I_off_n[2][90] = 4.04e-6; - I_off_n[2][100]= 4.48e-6; - - I_g_on_n[2][0] = 2.74e-9;//A/micron - I_g_on_n[2][10] = 2.74e-9; - I_g_on_n[2][20] = 2.74e-9; - I_g_on_n[2][30] = 2.74e-9; - I_g_on_n[2][40] = 2.74e-9; - I_g_on_n[2][50] = 2.74e-9; - I_g_on_n[2][60] = 2.74e-9; - I_g_on_n[2][70] = 2.74e-9; - I_g_on_n[2][80] = 2.74e-9; - I_g_on_n[2][90] = 2.74e-9; - I_g_on_n[2][100] = 2.74e-9; + // 22 nm LSTP DG + vdd[1] = 0.8; + Lphy[1] = 0.014; + Lelec[1] = 0.008; // Lelec is the electrical gate-length. + t_ox[1] = 1.1e-3; // micron + v_th[1] = 0.40126; // V + c_ox[1] = 2.30e-14; // F/micron2 + mobility_eff[1] = 738.09 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[1] = 6.64e-2; // V/micron + c_g_ideal[1] = 3.22e-16; // F/micron + c_fringe[1] = 0.08e-15; + c_junc[1] = 0; // F/micron2 + I_on_n[1] = 727.6e-6; // A/micron + I_on_p[1] = I_on_n[1] / 2; + nmos_effective_resistance_multiplier = 1.99; + n_to_p_eff_curr_drv_ratio[1] = 2; + gmp_to_gmn_multiplier[1] = 0.99; + Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / + I_on_n[1]; // ohm-micron + Rpchannelon[1] = + n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1]; // ohm-micron + long_channel_leakage_reduction[1] = 1 / 1.89; + I_off_n[1][0] = 2.43e-11; + I_off_n[1][10] = 4.85e-11; + I_off_n[1][20] = 9.68e-11; + I_off_n[1][30] = 1.94e-10; + I_off_n[1][40] = 3.87e-10; + I_off_n[1][50] = 7.73e-10; + I_off_n[1][60] = 3.55e-10; + I_off_n[1][70] = 3.09e-9; + I_off_n[1][80] = 6.19e-9; + I_off_n[1][90] = 1.24e-8; + I_off_n[1][100] = 2.48e-8; + I_g_on_n[1][0] = 4.51e-10; // A/micron + I_g_on_n[1][10] = 4.51e-10; + I_g_on_n[1][20] = 4.51e-10; + I_g_on_n[1][30] = 4.51e-10; + I_g_on_n[1][40] = 4.51e-10; + I_g_on_n[1][50] = 4.51e-10; + I_g_on_n[1][60] = 4.51e-10; + I_g_on_n[1][70] = 4.51e-10; + I_g_on_n[1][80] = 4.51e-10; + I_g_on_n[1][90] = 4.51e-10; + I_g_on_n[1][100] = 4.51e-10; + // 22 nm LOP + vdd[2] = 0.6; + Lphy[2] = 0.011; + Lelec[2] = 0.00604; // Lelec is the electrical gate-length. + t_ox[2] = 0.8e-3; // micron + v_th[2] = 0.2315; // V + c_ox[2] = 2.87e-14; // F/micron2 + mobility_eff[2] = 698.37 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[2] = 1.81e-2; // V/micron + c_g_ideal[2] = 3.16e-16; // F/micron + c_fringe[2] = 0.08e-15; + c_junc[2] = + 0; // F/micron2 This is Cj0 not Cjunc in MASTAR results->Dynamic Tab + I_on_n[2] = 916.1e-6; // A/micron + I_on_p[2] = I_on_n[2] / 2; + nmos_effective_resistance_multiplier = 1.73; + n_to_p_eff_curr_drv_ratio[2] = 2; + gmp_to_gmn_multiplier[2] = 1.11; + Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / + I_on_n[2]; // ohm-micron + Rpchannelon[2] = + n_to_p_eff_curr_drv_ratio[2] * Rnchannelon[2]; // ohm-micron + long_channel_leakage_reduction[2] = 1 / 2.38; - if (ram_cell_tech_type == 3) - {} - else if (ram_cell_tech_type == 4) - { - //22 nm commodity DRAM cell access transistor technology parameters. - //parameters - curr_vdd_dram_cell = 0.9;//0.45;//This value has reduced greatly in 2007 ITRS for all technology nodes. In - //2005 ITRS, the value was about twice the value in 2007 ITRS - Lphy[3] = 0.022;//micron - Lelec[3] = 0.0181;//micron. - curr_v_th_dram_access_transistor = 1;//V - width_dram_access_transistor = 0.022;//micron - curr_I_on_dram_cell = 20e-6; //This is a typical value that I have always - //kept constant. In reality this could perhaps be lower - curr_I_off_dram_cell_worst_case_length_temp = 1e-15;//A - curr_Wmemcella_dram = width_dram_access_transistor; - curr_Wmemcellpmos_dram = 0; - curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.022*0.022;//micron2. - curr_asp_ratio_cell_dram = 0.667; - curr_c_dram_cell = 30e-15;//This is a typical value that I have alwaus - //kept constant. + I_off_n[2][0] = 1.31e-8; + I_off_n[2][10] = 2.60e-8; + I_off_n[2][20] = 5.14e-8; + I_off_n[2][30] = 1.02e-7; + I_off_n[2][40] = 2.02e-7; + I_off_n[2][50] = 3.99e-7; + I_off_n[2][60] = 7.91e-7; + I_off_n[2][70] = 1.09e-6; + I_off_n[2][80] = 2.09e-6; + I_off_n[2][90] = 4.04e-6; + I_off_n[2][100] = 4.48e-6; - //22 nm commodity DRAM wordline transistor parameters obtained using MASTAR. - curr_vpp = 2.3;//vpp. V - t_ox[3] = 3.5e-3;//micron - v_th[3] = 1.0;//V - c_ox[3] = 9.06e-15;//F/micron2 - mobility_eff[3] = 367.29 * (1e-2 * 1e6 * 1e-2 * 1e6);//micron2 / Vs - Vdsat[3] = 0.0972; //V/micron - c_g_ideal[3] = 1.99e-16;//F/micron - c_fringe[3] = 0.053e-15;//F/micron - c_junc[3] = 1e-15;//F/micron2 - I_on_n[3] = 910.5e-6;//A/micron - I_on_p[3] = I_on_n[3] / 2;//This value for I_on_p is not really used. - nmos_effective_resistance_multiplier = 1.69;//Using the value from 32nm. - // - n_to_p_eff_curr_drv_ratio[3] = 1.95;//Using the value from 32nm - gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];//ohm-micron - Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3];//ohm-micron - long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 1.1e-13; //A/micron - I_off_n[3][10] = 2.11e-13; - I_off_n[3][20] = 3.88e-13; - I_off_n[3][30] = 6.9e-13; - I_off_n[3][40] = 1.19e-12; - I_off_n[3][50] = 1.98e-12; - I_off_n[3][60] = 3.22e-12; - I_off_n[3][70] = 5.09e-12; - I_off_n[3][80] = 7.85e-12; - I_off_n[3][90] = 1.18e-11; - I_off_n[3][100] = 1.72e-11; + I_g_on_n[2][0] = 2.74e-9; // A/micron + I_g_on_n[2][10] = 2.74e-9; + I_g_on_n[2][20] = 2.74e-9; + I_g_on_n[2][30] = 2.74e-9; + I_g_on_n[2][40] = 2.74e-9; + I_g_on_n[2][50] = 2.74e-9; + I_g_on_n[2][60] = 2.74e-9; + I_g_on_n[2][70] = 2.74e-9; + I_g_on_n[2][80] = 2.74e-9; + I_g_on_n[2][90] = 2.74e-9; + I_g_on_n[2][100] = 2.74e-9; - } - else - { - //some error handler - } + if (ram_cell_tech_type == 3) { + } else if (ram_cell_tech_type == 4) { + // 22 nm commodity DRAM cell access transistor technology parameters. + // parameters + curr_vdd_dram_cell = 0.9; // 0.45;//This value has reduced greatly in + // 2007 ITRS for all technology nodes. In + // 2005 ITRS, the value was about twice the value in 2007 ITRS + Lphy[3] = 0.022; // micron + Lelec[3] = 0.0181; // micron. + curr_v_th_dram_access_transistor = 1; // V + width_dram_access_transistor = 0.022; // micron + curr_I_on_dram_cell = + 20e-6; // This is a typical value that I have always + // kept constant. In reality this could perhaps be lower + curr_I_off_dram_cell_worst_case_length_temp = 1e-15; // A + curr_Wmemcella_dram = width_dram_access_transistor; + curr_Wmemcellpmos_dram = 0; + curr_Wmemcellnmos_dram = 0; + curr_area_cell_dram = 6 * 0.022 * 0.022; // micron2. + curr_asp_ratio_cell_dram = 0.667; + curr_c_dram_cell = 30e-15; // This is a typical value that I have + // alwaus + // kept constant. - //SRAM cell properties - curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; - curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; - curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; - curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; - curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited - curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; - curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; - curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; - curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; - curr_asp_ratio_cell_cam = 2.92; - //Empirical undifferetiated core/FU coefficient - curr_logic_scaling_co_eff = 0.7*0.7*0.7*0.7; - curr_core_tx_density = 1.25/0.7/0.7; - curr_sckt_co_eff = 1.1296; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb - } + // 22 nm commodity DRAM wordline transistor parameters obtained using + // MASTAR. + curr_vpp = 2.3; // vpp. V + t_ox[3] = 3.5e-3; // micron + v_th[3] = 1.0; // V + c_ox[3] = 9.06e-15; // F/micron2 + mobility_eff[3] = 367.29 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[3] = 0.0972; // V/micron + c_g_ideal[3] = 1.99e-16; // F/micron + c_fringe[3] = 0.053e-15; // F/micron + c_junc[3] = 1e-15; // F/micron2 + I_on_n[3] = 910.5e-6; // A/micron + I_on_p[3] = I_on_n[3] / 2; // This value for I_on_p is not really used. + nmos_effective_resistance_multiplier = + 1.69; // Using the value from 32nm. + // + n_to_p_eff_curr_drv_ratio[3] = 1.95; // Using the value from 32nm + gmp_to_gmn_multiplier[3] = 0.90; + Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / + I_on_n[3]; // ohm-micron + Rpchannelon[3] = + n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; // ohm-micron + long_channel_leakage_reduction[3] = 1; + I_off_n[3][0] = 1.1e-13; // A/micron + I_off_n[3][10] = 2.11e-13; + I_off_n[3][20] = 3.88e-13; + I_off_n[3][30] = 6.9e-13; + I_off_n[3][40] = 1.19e-12; + I_off_n[3][50] = 1.98e-12; + I_off_n[3][60] = 3.22e-12; + I_off_n[3][70] = 5.09e-12; + I_off_n[3][80] = 7.85e-12; + I_off_n[3][90] = 1.18e-11; + I_off_n[3][100] = 1.72e-11; - if(tech == 16){ - //For 2019, MPU/ASIC stagger-contacted M1 half-pitch is 16 nm (so this is 16 nm - //technology i.e. FEATURESIZE = 0.016). Using the DG process numbers for HP. - //16 nm HP - vdd[0] = 0.7; - Lphy[0] = 0.006;//Lphy is the physical gate-length. - Lelec[0] = 0.00315;//Lelec is the electrical gate-length. - t_ox[0] = 0.5e-3;//micron - v_th[0] = 0.1489;//V - c_ox[0] = 3.83e-14;//F/micron2 Cox_elec in MASTAR - mobility_eff[0] = 476.15 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs - Vdsat[0] = 1.42e-2; //V/micron calculated in spreadsheet - c_g_ideal[0] = 2.30e-16;//F/micron - c_fringe[0] = 0.06e-15;//F/micron MASTAR inputdynamic/3 - c_junc[0] = 0;//F/micron2 MASTAR result dynamic - I_on_n[0] = 2768.4e-6;//A/micron - I_on_p[0] = I_on_n[0] / 2;//A/micron //This value for I_on_p is not really used. - nmos_effective_resistance_multiplier = 1.48;//nmos_effective_resistance_multiplier is the ratio of Ieff to Idsat where Ieff is the effective NMOS current and Idsat is the saturation current. - n_to_p_eff_curr_drv_ratio[0] = 2; //Wpmos/Wnmos = 2 in 2007 MASTAR. Look in - //"Dynamic" tab of Device workspace. - gmp_to_gmn_multiplier[0] = 1.38; //Just using the 32nm SOI value. - Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron - Rpchannelon[0] = n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0];//ohm-micron - long_channel_leakage_reduction[0] = 1/2.655; - I_off_n[0][0] = 1.52e-7/1.5*1.2*1.07; - I_off_n[0][10] = 1.55e-7/1.5*1.2*1.07; - I_off_n[0][20] = 1.59e-7/1.5*1.2*1.07; - I_off_n[0][30] = 1.68e-7/1.5*1.2*1.07; - I_off_n[0][40] = 1.90e-7/1.5*1.2*1.07; - I_off_n[0][50] = 2.69e-7/1.5*1.2*1.07; - I_off_n[0][60] = 5.32e-7/1.5*1.2*1.07; - I_off_n[0][70] = 1.02e-6/1.5*1.2*1.07; - I_off_n[0][80] = 1.62e-6/1.5*1.2*1.07; - I_off_n[0][90] = 2.73e-6/1.5*1.2*1.07; - I_off_n[0][100] = 6.1e-6/1.5*1.2*1.07; - //for 16nm DG HP - I_g_on_n[0][0] = 1.07e-9;//A/micron - I_g_on_n[0][10] = 1.07e-9; - I_g_on_n[0][20] = 1.07e-9; - I_g_on_n[0][30] = 1.07e-9; - I_g_on_n[0][40] = 1.07e-9; - I_g_on_n[0][50] = 1.07e-9; - I_g_on_n[0][60] = 1.07e-9; - I_g_on_n[0][70] = 1.07e-9; - I_g_on_n[0][80] = 1.07e-9; - I_g_on_n[0][90] = 1.07e-9; - I_g_on_n[0][100] = 1.07e-9; + } else { + // some error handler + } -// //16 nm LSTP DG -// vdd[1] = 0.8; -// Lphy[1] = 0.014; -// Lelec[1] = 0.008;//Lelec is the electrical gate-length. -// t_ox[1] = 1.1e-3;//micron -// v_th[1] = 0.40126;//V -// c_ox[1] = 2.30e-14;//F/micron2 -// mobility_eff[1] = 738.09 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 / Vs -// Vdsat[1] = 6.64e-2; //V/micron -// c_g_ideal[1] = 3.22e-16;//F/micron -// c_fringe[1] = 0.008e-15; -// c_junc[1] = 0;//F/micron2 -// I_on_n[1] = 727.6e-6;//A/micron -// I_on_p[1] = I_on_n[1] / 2; -// nmos_effective_resistance_multiplier = 1.99; -// n_to_p_eff_curr_drv_ratio[1] = 2; -// gmp_to_gmn_multiplier[1] = 0.99; -// Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];//ohm-micron -// Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * Rnchannelon[1];//ohm-micron -// I_off_n[1][0] = 2.43e-11; -// I_off_n[1][10] = 4.85e-11; -// I_off_n[1][20] = 9.68e-11; -// I_off_n[1][30] = 1.94e-10; -// I_off_n[1][40] = 3.87e-10; -// I_off_n[1][50] = 7.73e-10; -// I_off_n[1][60] = 3.55e-10; -// I_off_n[1][70] = 3.09e-9; -// I_off_n[1][80] = 6.19e-9; -// I_off_n[1][90] = 1.24e-8; -// I_off_n[1][100]= 2.48e-8; -// -// // for 22nm LSTP HP -// I_g_on_n[1][0] = 4.51e-10;//A/micron -// I_g_on_n[1][10] = 4.51e-10; -// I_g_on_n[1][20] = 4.51e-10; -// I_g_on_n[1][30] = 4.51e-10; -// I_g_on_n[1][40] = 4.51e-10; -// I_g_on_n[1][50] = 4.51e-10; -// I_g_on_n[1][60] = 4.51e-10; -// I_g_on_n[1][70] = 4.51e-10; -// I_g_on_n[1][80] = 4.51e-10; -// I_g_on_n[1][90] = 4.51e-10; -// I_g_on_n[1][100] = 4.51e-10; + // SRAM cell properties + curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; + curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; + curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; + curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; + curr_asp_ratio_cell_sram = 1.46; + // CAM cell properties //TODO: data need to be revisited + curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; + curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; + curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; + curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; + curr_asp_ratio_cell_cam = 2.92; + // Empirical undifferetiated core/FU coefficient + curr_logic_scaling_co_eff = 0.7 * 0.7 * 0.7 * 0.7; + curr_core_tx_density = 1.25 / 0.7 / 0.7; + curr_sckt_co_eff = 1.1296; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb + } + if (tech == 16) { + // For 2019, MPU/ASIC stagger-contacted M1 half-pitch is 16 nm (so this is + // 16 nm + // technology i.e. FEATURESIZE = 0.016). Using the DG process numbers for + // HP. + // 16 nm HP + vdd[0] = 0.7; + Lphy[0] = 0.006; // Lphy is the physical gate-length. + Lelec[0] = 0.00315; // Lelec is the electrical gate-length. + t_ox[0] = 0.5e-3; // micron + v_th[0] = 0.1489; // V + c_ox[0] = 3.83e-14; // F/micron2 Cox_elec in MASTAR + mobility_eff[0] = 476.15 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[0] = 1.42e-2; // V/micron calculated in spreadsheet + c_g_ideal[0] = 2.30e-16; // F/micron + c_fringe[0] = 0.06e-15; // F/micron MASTAR inputdynamic/3 + c_junc[0] = 0; // F/micron2 MASTAR result dynamic + I_on_n[0] = 2768.4e-6; // A/micron + I_on_p[0] = I_on_n[0] / + 2; // A/micron //This value for I_on_p is not really used. + nmos_effective_resistance_multiplier = + 1.48; // nmos_effective_resistance_multiplier is the ratio of Ieff + // to Idsat where Ieff is the effective NMOS current and Idsat + // is the saturation current. + n_to_p_eff_curr_drv_ratio[0] = + 2; // Wpmos/Wnmos = 2 in 2007 MASTAR. Look in + //"Dynamic" tab of Device workspace. + gmp_to_gmn_multiplier[0] = 1.38; // Just using the 32nm SOI value. + Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / + I_on_n[0]; // ohm-micron + Rpchannelon[0] = + n_to_p_eff_curr_drv_ratio[0] * Rnchannelon[0]; // ohm-micron + long_channel_leakage_reduction[0] = 1 / 2.655; + I_off_n[0][0] = 1.52e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][10] = 1.55e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][20] = 1.59e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][30] = 1.68e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][40] = 1.90e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][50] = 2.69e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][60] = 5.32e-7 / 1.5 * 1.2 * 1.07; + I_off_n[0][70] = 1.02e-6 / 1.5 * 1.2 * 1.07; + I_off_n[0][80] = 1.62e-6 / 1.5 * 1.2 * 1.07; + I_off_n[0][90] = 2.73e-6 / 1.5 * 1.2 * 1.07; + I_off_n[0][100] = 6.1e-6 / 1.5 * 1.2 * 1.07; + // for 16nm DG HP + I_g_on_n[0][0] = 1.07e-9; // A/micron + I_g_on_n[0][10] = 1.07e-9; + I_g_on_n[0][20] = 1.07e-9; + I_g_on_n[0][30] = 1.07e-9; + I_g_on_n[0][40] = 1.07e-9; + I_g_on_n[0][50] = 1.07e-9; + I_g_on_n[0][60] = 1.07e-9; + I_g_on_n[0][70] = 1.07e-9; + I_g_on_n[0][80] = 1.07e-9; + I_g_on_n[0][90] = 1.07e-9; + I_g_on_n[0][100] = 1.07e-9; - if (ram_cell_tech_type == 3) - {} - else if (ram_cell_tech_type == 4) - { - //22 nm commodity DRAM cell access transistor technology parameters. - //parameters - curr_vdd_dram_cell = 0.9;//0.45;//This value has reduced greatly in 2007 ITRS for all technology nodes. In - //2005 ITRS, the value was about twice the value in 2007 ITRS - Lphy[3] = 0.022;//micron - Lelec[3] = 0.0181;//micron. - curr_v_th_dram_access_transistor = 1;//V - width_dram_access_transistor = 0.022;//micron - curr_I_on_dram_cell = 20e-6; //This is a typical value that I have always - //kept constant. In reality this could perhaps be lower - curr_I_off_dram_cell_worst_case_length_temp = 1e-15;//A - curr_Wmemcella_dram = width_dram_access_transistor; - curr_Wmemcellpmos_dram = 0; - curr_Wmemcellnmos_dram = 0; - curr_area_cell_dram = 6*0.022*0.022;//micron2. - curr_asp_ratio_cell_dram = 0.667; - curr_c_dram_cell = 30e-15;//This is a typical value that I have alwaus - //kept constant. + // //16 nm LSTP DG + // vdd[1] = 0.8; + // Lphy[1] = 0.014; + // Lelec[1] = 0.008;//Lelec is the electrical gate-length. + // t_ox[1] = 1.1e-3;//micron + // v_th[1] = 0.40126;//V + // c_ox[1] = 2.30e-14;//F/micron2 + // mobility_eff[1] = 738.09 * (1e-2 * 1e6 * 1e-2 * 1e6); //micron2 + // / Vs + // Vdsat[1] = 6.64e-2; //V/micron + // c_g_ideal[1] = 3.22e-16;//F/micron + // c_fringe[1] = 0.008e-15; + // c_junc[1] = 0;//F/micron2 + // I_on_n[1] = 727.6e-6;//A/micron + // I_on_p[1] = I_on_n[1] / 2; + // nmos_effective_resistance_multiplier = 1.99; + // n_to_p_eff_curr_drv_ratio[1] = 2; + // gmp_to_gmn_multiplier[1] = 0.99; + // Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / + // I_on_n[1];//ohm-micron + // Rpchannelon[1] = n_to_p_eff_curr_drv_ratio[1] * + // Rnchannelon[1];//ohm-micron + // I_off_n[1][0] = 2.43e-11; + // I_off_n[1][10] = 4.85e-11; + // I_off_n[1][20] = 9.68e-11; + // I_off_n[1][30] = 1.94e-10; + // I_off_n[1][40] = 3.87e-10; + // I_off_n[1][50] = 7.73e-10; + // I_off_n[1][60] = 3.55e-10; + // I_off_n[1][70] = 3.09e-9; + // I_off_n[1][80] = 6.19e-9; + // I_off_n[1][90] = 1.24e-8; + // I_off_n[1][100]= 2.48e-8; + // + // // for 22nm LSTP HP + // I_g_on_n[1][0] = 4.51e-10;//A/micron + // I_g_on_n[1][10] = 4.51e-10; + // I_g_on_n[1][20] = 4.51e-10; + // I_g_on_n[1][30] = 4.51e-10; + // I_g_on_n[1][40] = 4.51e-10; + // I_g_on_n[1][50] = 4.51e-10; + // I_g_on_n[1][60] = 4.51e-10; + // I_g_on_n[1][70] = 4.51e-10; + // I_g_on_n[1][80] = 4.51e-10; + // I_g_on_n[1][90] = 4.51e-10; + // I_g_on_n[1][100] = 4.51e-10; - //22 nm commodity DRAM wordline transistor parameters obtained using MASTAR. - curr_vpp = 2.3;//vpp. V - t_ox[3] = 3.5e-3;//micron - v_th[3] = 1.0;//V - c_ox[3] = 9.06e-15;//F/micron2 - mobility_eff[3] = 367.29 * (1e-2 * 1e6 * 1e-2 * 1e6);//micron2 / Vs - Vdsat[3] = 0.0972; //V/micron - c_g_ideal[3] = 1.99e-16;//F/micron - c_fringe[3] = 0.053e-15;//F/micron - c_junc[3] = 1e-15;//F/micron2 - I_on_n[3] = 910.5e-6;//A/micron - I_on_p[3] = I_on_n[3] / 2;//This value for I_on_p is not really used. - nmos_effective_resistance_multiplier = 1.69;//Using the value from 32nm. - // - n_to_p_eff_curr_drv_ratio[3] = 1.95;//Using the value from 32nm - gmp_to_gmn_multiplier[3] = 0.90; - Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];//ohm-micron - Rpchannelon[3] = n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3];//ohm-micron - long_channel_leakage_reduction[3] = 1; - I_off_n[3][0] = 1.1e-13; //A/micron - I_off_n[3][10] = 2.11e-13; - I_off_n[3][20] = 3.88e-13; - I_off_n[3][30] = 6.9e-13; - I_off_n[3][40] = 1.19e-12; - I_off_n[3][50] = 1.98e-12; - I_off_n[3][60] = 3.22e-12; - I_off_n[3][70] = 5.09e-12; - I_off_n[3][80] = 7.85e-12; - I_off_n[3][90] = 1.18e-11; - I_off_n[3][100] = 1.72e-11; + if (ram_cell_tech_type == 3) { + } else if (ram_cell_tech_type == 4) { + // 22 nm commodity DRAM cell access transistor technology parameters. + // parameters + curr_vdd_dram_cell = 0.9; // 0.45;//This value has reduced greatly in + // 2007 ITRS for all technology nodes. In + // 2005 ITRS, the value was about twice the value in 2007 ITRS + Lphy[3] = 0.022; // micron + Lelec[3] = 0.0181; // micron. + curr_v_th_dram_access_transistor = 1; // V + width_dram_access_transistor = 0.022; // micron + curr_I_on_dram_cell = + 20e-6; // This is a typical value that I have always + // kept constant. In reality this could perhaps be lower + curr_I_off_dram_cell_worst_case_length_temp = 1e-15; // A + curr_Wmemcella_dram = width_dram_access_transistor; + curr_Wmemcellpmos_dram = 0; + curr_Wmemcellnmos_dram = 0; + curr_area_cell_dram = 6 * 0.022 * 0.022; // micron2. + curr_asp_ratio_cell_dram = 0.667; + curr_c_dram_cell = 30e-15; // This is a typical value that I have + // alwaus + // kept constant. - } - else - { - //some error handler - } + // 22 nm commodity DRAM wordline transistor parameters obtained using + // MASTAR. + curr_vpp = 2.3; // vpp. V + t_ox[3] = 3.5e-3; // micron + v_th[3] = 1.0; // V + c_ox[3] = 9.06e-15; // F/micron2 + mobility_eff[3] = 367.29 * (1e-2 * 1e6 * 1e-2 * 1e6); // micron2 / Vs + Vdsat[3] = 0.0972; // V/micron + c_g_ideal[3] = 1.99e-16; // F/micron + c_fringe[3] = 0.053e-15; // F/micron + c_junc[3] = 1e-15; // F/micron2 + I_on_n[3] = 910.5e-6; // A/micron + I_on_p[3] = I_on_n[3] / 2; // This value for I_on_p is not really used. + nmos_effective_resistance_multiplier = + 1.69; // Using the value from 32nm. + // + n_to_p_eff_curr_drv_ratio[3] = 1.95; // Using the value from 32nm + gmp_to_gmn_multiplier[3] = 0.90; + Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / + I_on_n[3]; // ohm-micron + Rpchannelon[3] = + n_to_p_eff_curr_drv_ratio[3] * Rnchannelon[3]; // ohm-micron + long_channel_leakage_reduction[3] = 1; + I_off_n[3][0] = 1.1e-13; // A/micron + I_off_n[3][10] = 2.11e-13; + I_off_n[3][20] = 3.88e-13; + I_off_n[3][30] = 6.9e-13; + I_off_n[3][40] = 1.19e-12; + I_off_n[3][50] = 1.98e-12; + I_off_n[3][60] = 3.22e-12; + I_off_n[3][70] = 5.09e-12; + I_off_n[3][80] = 7.85e-12; + I_off_n[3][90] = 1.18e-11; + I_off_n[3][100] = 1.72e-11; - //SRAM cell properties - curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; - curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; - curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; - curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; - curr_asp_ratio_cell_sram = 1.46; - //CAM cell properties //TODO: data need to be revisited - curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; - curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; - curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; - curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; - curr_asp_ratio_cell_cam = 2.92; - //Empirical undifferetiated core/FU coefficient - curr_logic_scaling_co_eff = 0.7*0.7*0.7*0.7*0.7; - curr_core_tx_density = 1.25/0.7/0.7/0.7; - curr_sckt_co_eff = 1.1296; - curr_chip_layout_overhead = 1.2;//die measurement results based on Niagara 1 and 2 - curr_macro_layout_overhead = 1.1;//EDA placement and routing tool rule of thumb - } + } else { + // some error handler + } + // SRAM cell properties + curr_Wmemcella_sram = 1.31 * g_ip->F_sz_um; + curr_Wmemcellpmos_sram = 1.23 * g_ip->F_sz_um; + curr_Wmemcellnmos_sram = 2.08 * g_ip->F_sz_um; + curr_area_cell_sram = 146 * g_ip->F_sz_um * g_ip->F_sz_um; + curr_asp_ratio_cell_sram = 1.46; + // CAM cell properties //TODO: data need to be revisited + curr_Wmemcella_cam = 1.31 * g_ip->F_sz_um; + curr_Wmemcellpmos_cam = 1.23 * g_ip->F_sz_um; + curr_Wmemcellnmos_cam = 2.08 * g_ip->F_sz_um; + curr_area_cell_cam = 292 * g_ip->F_sz_um * g_ip->F_sz_um; + curr_asp_ratio_cell_cam = 2.92; + // Empirical undifferetiated core/FU coefficient + curr_logic_scaling_co_eff = 0.7 * 0.7 * 0.7 * 0.7 * 0.7; + curr_core_tx_density = 1.25 / 0.7 / 0.7 / 0.7; + curr_sckt_co_eff = 1.1296; + curr_chip_layout_overhead = + 1.2; // die measurement results based on Niagara 1 and 2 + curr_macro_layout_overhead = + 1.1; // EDA placement and routing tool rule of thumb + } - g_tp.peri_global.Vdd += curr_alpha * vdd[peri_global_tech_type]; - g_tp.peri_global.t_ox += curr_alpha * t_ox[peri_global_tech_type]; - g_tp.peri_global.Vth += curr_alpha * v_th[peri_global_tech_type]; - g_tp.peri_global.C_ox += curr_alpha * c_ox[peri_global_tech_type]; + g_tp.peri_global.Vdd += curr_alpha * vdd[peri_global_tech_type]; + g_tp.peri_global.t_ox += curr_alpha * t_ox[peri_global_tech_type]; + g_tp.peri_global.Vth += curr_alpha * v_th[peri_global_tech_type]; + g_tp.peri_global.C_ox += curr_alpha * c_ox[peri_global_tech_type]; g_tp.peri_global.C_g_ideal += curr_alpha * c_g_ideal[peri_global_tech_type]; - g_tp.peri_global.C_fringe += curr_alpha * c_fringe[peri_global_tech_type]; - g_tp.peri_global.C_junc += curr_alpha * c_junc[peri_global_tech_type]; + g_tp.peri_global.C_fringe += curr_alpha * c_fringe[peri_global_tech_type]; + g_tp.peri_global.C_junc += curr_alpha * c_junc[peri_global_tech_type]; g_tp.peri_global.C_junc_sidewall = 0.25e-15; // F/micron - g_tp.peri_global.l_phy += curr_alpha * Lphy[peri_global_tech_type]; - g_tp.peri_global.l_elec += curr_alpha * Lelec[peri_global_tech_type]; - g_tp.peri_global.I_on_n += curr_alpha * I_on_n[peri_global_tech_type]; - g_tp.peri_global.R_nch_on += curr_alpha * Rnchannelon[peri_global_tech_type]; - g_tp.peri_global.R_pch_on += curr_alpha * Rpchannelon[peri_global_tech_type]; - g_tp.peri_global.n_to_p_eff_curr_drv_ratio - += curr_alpha * n_to_p_eff_curr_drv_ratio[peri_global_tech_type]; - g_tp.peri_global.long_channel_leakage_reduction - += curr_alpha * long_channel_leakage_reduction[peri_global_tech_type]; - g_tp.peri_global.I_off_n += curr_alpha * I_off_n[peri_global_tech_type][g_ip->temp - 300]; - g_tp.peri_global.I_off_p += curr_alpha * I_off_n[peri_global_tech_type][g_ip->temp - 300]; - g_tp.peri_global.I_g_on_n += curr_alpha * I_g_on_n[peri_global_tech_type][g_ip->temp - 300]; - g_tp.peri_global.I_g_on_p += curr_alpha * I_g_on_n[peri_global_tech_type][g_ip->temp - 300]; - gmp_to_gmn_multiplier_periph_global += curr_alpha * gmp_to_gmn_multiplier[peri_global_tech_type]; + g_tp.peri_global.l_phy += curr_alpha * Lphy[peri_global_tech_type]; + g_tp.peri_global.l_elec += curr_alpha * Lelec[peri_global_tech_type]; + g_tp.peri_global.I_on_n += curr_alpha * I_on_n[peri_global_tech_type]; + g_tp.peri_global.R_nch_on += + curr_alpha * Rnchannelon[peri_global_tech_type]; + g_tp.peri_global.R_pch_on += + curr_alpha * Rpchannelon[peri_global_tech_type]; + g_tp.peri_global.n_to_p_eff_curr_drv_ratio += + curr_alpha * n_to_p_eff_curr_drv_ratio[peri_global_tech_type]; + g_tp.peri_global.long_channel_leakage_reduction += + curr_alpha * long_channel_leakage_reduction[peri_global_tech_type]; + g_tp.peri_global.I_off_n += + curr_alpha * I_off_n[peri_global_tech_type][g_ip->temp - 300]; + g_tp.peri_global.I_off_p += + curr_alpha * I_off_n[peri_global_tech_type][g_ip->temp - 300]; + g_tp.peri_global.I_g_on_n += + curr_alpha * I_g_on_n[peri_global_tech_type][g_ip->temp - 300]; + g_tp.peri_global.I_g_on_p += + curr_alpha * I_g_on_n[peri_global_tech_type][g_ip->temp - 300]; + gmp_to_gmn_multiplier_periph_global += + curr_alpha * gmp_to_gmn_multiplier[peri_global_tech_type]; - g_tp.sram_cell.Vdd += curr_alpha * vdd[ram_cell_tech_type]; - g_tp.sram_cell.l_phy += curr_alpha * Lphy[ram_cell_tech_type]; - g_tp.sram_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type]; - g_tp.sram_cell.t_ox += curr_alpha * t_ox[ram_cell_tech_type]; - g_tp.sram_cell.Vth += curr_alpha * v_th[ram_cell_tech_type]; + g_tp.sram_cell.Vdd += curr_alpha * vdd[ram_cell_tech_type]; + g_tp.sram_cell.l_phy += curr_alpha * Lphy[ram_cell_tech_type]; + g_tp.sram_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type]; + g_tp.sram_cell.t_ox += curr_alpha * t_ox[ram_cell_tech_type]; + g_tp.sram_cell.Vth += curr_alpha * v_th[ram_cell_tech_type]; g_tp.sram_cell.C_g_ideal += curr_alpha * c_g_ideal[ram_cell_tech_type]; - g_tp.sram_cell.C_fringe += curr_alpha * c_fringe[ram_cell_tech_type]; - g_tp.sram_cell.C_junc += curr_alpha * c_junc[ram_cell_tech_type]; + g_tp.sram_cell.C_fringe += curr_alpha * c_fringe[ram_cell_tech_type]; + g_tp.sram_cell.C_junc += curr_alpha * c_junc[ram_cell_tech_type]; g_tp.sram_cell.C_junc_sidewall = 0.25e-15; // F/micron - g_tp.sram_cell.I_on_n += curr_alpha * I_on_n[ram_cell_tech_type]; - g_tp.sram_cell.R_nch_on += curr_alpha * Rnchannelon[ram_cell_tech_type]; - g_tp.sram_cell.R_pch_on += curr_alpha * Rpchannelon[ram_cell_tech_type]; - g_tp.sram_cell.n_to_p_eff_curr_drv_ratio += curr_alpha * n_to_p_eff_curr_drv_ratio[ram_cell_tech_type]; - g_tp.sram_cell.long_channel_leakage_reduction += curr_alpha * long_channel_leakage_reduction[ram_cell_tech_type]; - g_tp.sram_cell.I_off_n += curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.sram_cell.I_off_p += curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.sram_cell.I_g_on_n += curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.sram_cell.I_g_on_p += curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.sram_cell.I_on_n += curr_alpha * I_on_n[ram_cell_tech_type]; + g_tp.sram_cell.R_nch_on += curr_alpha * Rnchannelon[ram_cell_tech_type]; + g_tp.sram_cell.R_pch_on += curr_alpha * Rpchannelon[ram_cell_tech_type]; + g_tp.sram_cell.n_to_p_eff_curr_drv_ratio += + curr_alpha * n_to_p_eff_curr_drv_ratio[ram_cell_tech_type]; + g_tp.sram_cell.long_channel_leakage_reduction += + curr_alpha * long_channel_leakage_reduction[ram_cell_tech_type]; + g_tp.sram_cell.I_off_n += + curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.sram_cell.I_off_p += + curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.sram_cell.I_g_on_n += + curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.sram_cell.I_g_on_p += + curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.dram_cell_Vdd += curr_alpha * curr_vdd_dram_cell; - g_tp.dram_acc.Vth += curr_alpha * curr_v_th_dram_access_transistor; - g_tp.dram_acc.l_phy += curr_alpha * Lphy[dram_cell_tech_flavor]; - g_tp.dram_acc.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor]; + g_tp.dram_cell_Vdd += curr_alpha * curr_vdd_dram_cell; + g_tp.dram_acc.Vth += curr_alpha * curr_v_th_dram_access_transistor; + g_tp.dram_acc.l_phy += curr_alpha * Lphy[dram_cell_tech_flavor]; + g_tp.dram_acc.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor]; g_tp.dram_acc.C_g_ideal += curr_alpha * c_g_ideal[dram_cell_tech_flavor]; - g_tp.dram_acc.C_fringe += curr_alpha * c_fringe[dram_cell_tech_flavor]; - g_tp.dram_acc.C_junc += curr_alpha * c_junc[dram_cell_tech_flavor]; + g_tp.dram_acc.C_fringe += curr_alpha * c_fringe[dram_cell_tech_flavor]; + g_tp.dram_acc.C_junc += curr_alpha * c_junc[dram_cell_tech_flavor]; g_tp.dram_acc.C_junc_sidewall = 0.25e-15; // F/micron - g_tp.dram_cell_I_on += curr_alpha * curr_I_on_dram_cell; - g_tp.dram_cell_I_off_worst_case_len_temp += curr_alpha * curr_I_off_dram_cell_worst_case_length_temp; - g_tp.dram_acc.I_on_n += curr_alpha * I_on_n[dram_cell_tech_flavor]; - g_tp.dram_cell_C += curr_alpha * curr_c_dram_cell; - g_tp.vpp += curr_alpha * curr_vpp; - g_tp.dram_wl.l_phy += curr_alpha * Lphy[dram_cell_tech_flavor]; - g_tp.dram_wl.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor]; - g_tp.dram_wl.C_g_ideal += curr_alpha * c_g_ideal[dram_cell_tech_flavor]; - g_tp.dram_wl.C_fringe += curr_alpha * c_fringe[dram_cell_tech_flavor]; - g_tp.dram_wl.C_junc += curr_alpha * c_junc[dram_cell_tech_flavor]; + g_tp.dram_cell_I_on += curr_alpha * curr_I_on_dram_cell; + g_tp.dram_cell_I_off_worst_case_len_temp += + curr_alpha * curr_I_off_dram_cell_worst_case_length_temp; + g_tp.dram_acc.I_on_n += curr_alpha * I_on_n[dram_cell_tech_flavor]; + g_tp.dram_cell_C += curr_alpha * curr_c_dram_cell; + g_tp.vpp += curr_alpha * curr_vpp; + g_tp.dram_wl.l_phy += curr_alpha * Lphy[dram_cell_tech_flavor]; + g_tp.dram_wl.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor]; + g_tp.dram_wl.C_g_ideal += curr_alpha * c_g_ideal[dram_cell_tech_flavor]; + g_tp.dram_wl.C_fringe += curr_alpha * c_fringe[dram_cell_tech_flavor]; + g_tp.dram_wl.C_junc += curr_alpha * c_junc[dram_cell_tech_flavor]; g_tp.dram_wl.C_junc_sidewall = 0.25e-15; // F/micron - g_tp.dram_wl.I_on_n += curr_alpha * I_on_n[dram_cell_tech_flavor]; - g_tp.dram_wl.R_nch_on += curr_alpha * Rnchannelon[dram_cell_tech_flavor]; - g_tp.dram_wl.R_pch_on += curr_alpha * Rpchannelon[dram_cell_tech_flavor]; - g_tp.dram_wl.n_to_p_eff_curr_drv_ratio += curr_alpha * n_to_p_eff_curr_drv_ratio[dram_cell_tech_flavor]; - g_tp.dram_wl.long_channel_leakage_reduction += curr_alpha * long_channel_leakage_reduction[dram_cell_tech_flavor]; - g_tp.dram_wl.I_off_n += curr_alpha * I_off_n[dram_cell_tech_flavor][g_ip->temp - 300]; - g_tp.dram_wl.I_off_p += curr_alpha * I_off_n[dram_cell_tech_flavor][g_ip->temp - 300]; + g_tp.dram_wl.I_on_n += curr_alpha * I_on_n[dram_cell_tech_flavor]; + g_tp.dram_wl.R_nch_on += curr_alpha * Rnchannelon[dram_cell_tech_flavor]; + g_tp.dram_wl.R_pch_on += curr_alpha * Rpchannelon[dram_cell_tech_flavor]; + g_tp.dram_wl.n_to_p_eff_curr_drv_ratio += + curr_alpha * n_to_p_eff_curr_drv_ratio[dram_cell_tech_flavor]; + g_tp.dram_wl.long_channel_leakage_reduction += + curr_alpha * long_channel_leakage_reduction[dram_cell_tech_flavor]; + g_tp.dram_wl.I_off_n += + curr_alpha * I_off_n[dram_cell_tech_flavor][g_ip->temp - 300]; + g_tp.dram_wl.I_off_p += + curr_alpha * I_off_n[dram_cell_tech_flavor][g_ip->temp - 300]; - g_tp.cam_cell.Vdd += curr_alpha * vdd[ram_cell_tech_type]; - g_tp.cam_cell.l_phy += curr_alpha * Lphy[ram_cell_tech_type]; - g_tp.cam_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type]; - g_tp.cam_cell.t_ox += curr_alpha * t_ox[ram_cell_tech_type]; - g_tp.cam_cell.Vth += curr_alpha * v_th[ram_cell_tech_type]; + g_tp.cam_cell.Vdd += curr_alpha * vdd[ram_cell_tech_type]; + g_tp.cam_cell.l_phy += curr_alpha * Lphy[ram_cell_tech_type]; + g_tp.cam_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type]; + g_tp.cam_cell.t_ox += curr_alpha * t_ox[ram_cell_tech_type]; + g_tp.cam_cell.Vth += curr_alpha * v_th[ram_cell_tech_type]; g_tp.cam_cell.C_g_ideal += curr_alpha * c_g_ideal[ram_cell_tech_type]; - g_tp.cam_cell.C_fringe += curr_alpha * c_fringe[ram_cell_tech_type]; - g_tp.cam_cell.C_junc += curr_alpha * c_junc[ram_cell_tech_type]; + g_tp.cam_cell.C_fringe += curr_alpha * c_fringe[ram_cell_tech_type]; + g_tp.cam_cell.C_junc += curr_alpha * c_junc[ram_cell_tech_type]; g_tp.cam_cell.C_junc_sidewall = 0.25e-15; // F/micron - g_tp.cam_cell.I_on_n += curr_alpha * I_on_n[ram_cell_tech_type]; - g_tp.cam_cell.R_nch_on += curr_alpha * Rnchannelon[ram_cell_tech_type]; - g_tp.cam_cell.R_pch_on += curr_alpha * Rpchannelon[ram_cell_tech_type]; - g_tp.cam_cell.n_to_p_eff_curr_drv_ratio += curr_alpha * n_to_p_eff_curr_drv_ratio[ram_cell_tech_type]; - g_tp.cam_cell.long_channel_leakage_reduction += curr_alpha * long_channel_leakage_reduction[ram_cell_tech_type]; - g_tp.cam_cell.I_off_n += curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.cam_cell.I_off_p += curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.cam_cell.I_g_on_n += curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.cam_cell.I_g_on_p += curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.cam_cell.I_on_n += curr_alpha * I_on_n[ram_cell_tech_type]; + g_tp.cam_cell.R_nch_on += curr_alpha * Rnchannelon[ram_cell_tech_type]; + g_tp.cam_cell.R_pch_on += curr_alpha * Rpchannelon[ram_cell_tech_type]; + g_tp.cam_cell.n_to_p_eff_curr_drv_ratio += + curr_alpha * n_to_p_eff_curr_drv_ratio[ram_cell_tech_type]; + g_tp.cam_cell.long_channel_leakage_reduction += + curr_alpha * long_channel_leakage_reduction[ram_cell_tech_type]; + g_tp.cam_cell.I_off_n += + curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.cam_cell.I_off_p += + curr_alpha * I_off_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.cam_cell.I_g_on_n += + curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; + g_tp.cam_cell.I_g_on_p += + curr_alpha * I_g_on_n[ram_cell_tech_type][g_ip->temp - 300]; - g_tp.dram.cell_a_w += curr_alpha * curr_Wmemcella_dram; + g_tp.dram.cell_a_w += curr_alpha * curr_Wmemcella_dram; g_tp.dram.cell_pmos_w += curr_alpha * curr_Wmemcellpmos_dram; g_tp.dram.cell_nmos_w += curr_alpha * curr_Wmemcellnmos_dram; - area_cell_dram += curr_alpha * curr_area_cell_dram; - asp_ratio_cell_dram += curr_alpha * curr_asp_ratio_cell_dram; + area_cell_dram += curr_alpha * curr_area_cell_dram; + asp_ratio_cell_dram += curr_alpha * curr_asp_ratio_cell_dram; - g_tp.sram.cell_a_w += curr_alpha * curr_Wmemcella_sram; + g_tp.sram.cell_a_w += curr_alpha * curr_Wmemcella_sram; g_tp.sram.cell_pmos_w += curr_alpha * curr_Wmemcellpmos_sram; g_tp.sram.cell_nmos_w += curr_alpha * curr_Wmemcellnmos_sram; area_cell_sram += curr_alpha * curr_area_cell_sram; asp_ratio_cell_sram += curr_alpha * curr_asp_ratio_cell_sram; - g_tp.cam.cell_a_w += curr_alpha * curr_Wmemcella_cam;//sheng + g_tp.cam.cell_a_w += curr_alpha * curr_Wmemcella_cam; // sheng g_tp.cam.cell_pmos_w += curr_alpha * curr_Wmemcellpmos_cam; g_tp.cam.cell_nmos_w += curr_alpha * curr_Wmemcellnmos_cam; area_cell_cam += curr_alpha * curr_area_cell_cam; asp_ratio_cell_cam += curr_alpha * curr_asp_ratio_cell_cam; - //Sense amplifier latch Gm calculation - mobility_eff_periph_global += curr_alpha * mobility_eff[peri_global_tech_type]; + // Sense amplifier latch Gm calculation + mobility_eff_periph_global += + curr_alpha * mobility_eff[peri_global_tech_type]; Vdsat_periph_global += curr_alpha * Vdsat[peri_global_tech_type]; - //Empirical undifferetiated core/FU coefficient - g_tp.scaling_factor.logic_scaling_co_eff += curr_alpha * curr_logic_scaling_co_eff; + // Empirical undifferetiated core/FU coefficient + g_tp.scaling_factor.logic_scaling_co_eff += + curr_alpha * curr_logic_scaling_co_eff; g_tp.scaling_factor.core_tx_density += curr_alpha * curr_core_tx_density; - g_tp.chip_layout_overhead += curr_alpha * curr_chip_layout_overhead; + g_tp.chip_layout_overhead += curr_alpha * curr_chip_layout_overhead; g_tp.macro_layout_overhead += curr_alpha * curr_macro_layout_overhead; - g_tp.sckt_co_eff += curr_alpha * curr_sckt_co_eff; + g_tp.sckt_co_eff += curr_alpha * curr_sckt_co_eff; } - - //Currently we are not modeling the resistance/capacitance of poly anywhere. - //Continuous function (or date have been processed) does not need linear interpolation - g_tp.w_comp_inv_p1 = 12.5 * g_ip->F_sz_um;//this was 10 micron for the 0.8 micron process - g_tp.w_comp_inv_n1 = 7.5 * g_ip->F_sz_um;//this was 6 micron for the 0.8 micron process - g_tp.w_comp_inv_p2 = 25 * g_ip->F_sz_um;//this was 20 micron for the 0.8 micron process - g_tp.w_comp_inv_n2 = 15 * g_ip->F_sz_um;//this was 12 micron for the 0.8 micron process - g_tp.w_comp_inv_p3 = 50 * g_ip->F_sz_um;//this was 40 micron for the 0.8 micron process - g_tp.w_comp_inv_n3 = 30 * g_ip->F_sz_um;//this was 24 micron for the 0.8 micron process - g_tp.w_eval_inv_p = 100 * g_ip->F_sz_um;//this was 80 micron for the 0.8 micron process - g_tp.w_eval_inv_n = 50 * g_ip->F_sz_um;//this was 40 micron for the 0.8 micron process - g_tp.w_comp_n = 12.5 * g_ip->F_sz_um;//this was 10 micron for the 0.8 micron process - g_tp.w_comp_p = 37.5 * g_ip->F_sz_um;//this was 30 micron for the 0.8 micron process + // Currently we are not modeling the resistance/capacitance of poly anywhere. + // Continuous function (or date have been processed) does not need linear + // interpolation + g_tp.w_comp_inv_p1 = + 12.5 * g_ip->F_sz_um; // this was 10 micron for the 0.8 micron process + g_tp.w_comp_inv_n1 = + 7.5 * g_ip->F_sz_um; // this was 6 micron for the 0.8 micron process + g_tp.w_comp_inv_p2 = + 25 * g_ip->F_sz_um; // this was 20 micron for the 0.8 micron process + g_tp.w_comp_inv_n2 = + 15 * g_ip->F_sz_um; // this was 12 micron for the 0.8 micron process + g_tp.w_comp_inv_p3 = + 50 * g_ip->F_sz_um; // this was 40 micron for the 0.8 micron process + g_tp.w_comp_inv_n3 = + 30 * g_ip->F_sz_um; // this was 24 micron for the 0.8 micron process + g_tp.w_eval_inv_p = + 100 * g_ip->F_sz_um; // this was 80 micron for the 0.8 micron process + g_tp.w_eval_inv_n = + 50 * g_ip->F_sz_um; // this was 40 micron for the 0.8 micron process + g_tp.w_comp_n = + 12.5 * g_ip->F_sz_um; // this was 10 micron for the 0.8 micron process + g_tp.w_comp_p = + 37.5 * g_ip->F_sz_um; // this was 30 micron for the 0.8 micron process g_tp.MIN_GAP_BET_P_AND_N_DIFFS = 5 * g_ip->F_sz_um; g_tp.MIN_GAP_BET_SAME_TYPE_DIFFS = 1.5 * g_ip->F_sz_um; @@ -1828,255 +1904,264 @@ void init_tech_params(double technology, bool is_tag) g_tp.min_w_nmos_ = 3 * g_ip->F_sz_um / 2; g_tp.max_w_nmos_ = 100 * g_ip->F_sz_um; - g_tp.w_iso = 12.5*g_ip->F_sz_um;//was 10 micron for the 0.8 micron process - g_tp.w_sense_n = 3.75*g_ip->F_sz_um; // sense amplifier N-trans; was 3 micron for the 0.8 micron process - g_tp.w_sense_p = 7.5*g_ip->F_sz_um; // sense amplifier P-trans; was 6 micron for the 0.8 micron process - g_tp.w_sense_en = 5*g_ip->F_sz_um; // Sense enable transistor of the sense amplifier; was 4 micron for the 0.8 micron process - g_tp.w_nmos_b_mux = 6 * g_tp.min_w_nmos_; + g_tp.w_iso = 12.5 * g_ip->F_sz_um; // was 10 micron for the 0.8 micron + // process + g_tp.w_sense_n = 3.75 * g_ip->F_sz_um; // sense amplifier N-trans; was 3 + // micron for the 0.8 micron process + g_tp.w_sense_p = 7.5 * g_ip->F_sz_um; // sense amplifier P-trans; was 6 + // micron for the 0.8 micron process + g_tp.w_sense_en = 5 * g_ip->F_sz_um; // Sense enable transistor of the sense + // amplifier; was 4 micron for the 0.8 + // micron process + g_tp.w_nmos_b_mux = 6 * g_tp.min_w_nmos_; g_tp.w_nmos_sa_mux = 6 * g_tp.min_w_nmos_; - if (ram_cell_tech_type == comm_dram) - { + if (ram_cell_tech_type == comm_dram) { g_tp.max_w_nmos_dec = 8 * g_ip->F_sz_um; - g_tp.h_dec = 8; // in the unit of memory cell height - } - else - { + g_tp.h_dec = 8; // in the unit of memory cell height + } else { g_tp.max_w_nmos_dec = g_tp.max_w_nmos_; - g_tp.h_dec = 4; // in the unit of memory cell height + g_tp.h_dec = 4; // in the unit of memory cell height } g_tp.peri_global.C_overlap = 0.2 * g_tp.peri_global.C_g_ideal; - g_tp.sram_cell.C_overlap = 0.2 * g_tp.sram_cell.C_g_ideal; - g_tp.cam_cell.C_overlap = 0.2 * g_tp.cam_cell.C_g_ideal; + g_tp.sram_cell.C_overlap = 0.2 * g_tp.sram_cell.C_g_ideal; + g_tp.cam_cell.C_overlap = 0.2 * g_tp.cam_cell.C_g_ideal; g_tp.dram_acc.C_overlap = 0.2 * g_tp.dram_acc.C_g_ideal; g_tp.dram_acc.R_nch_on = g_tp.dram_cell_Vdd / g_tp.dram_acc.I_on_n; - //g_tp.dram_acc.R_pch_on = g_tp.dram_cell_Vdd / g_tp.dram_acc.I_on_p; + // g_tp.dram_acc.R_pch_on = g_tp.dram_cell_Vdd / g_tp.dram_acc.I_on_p; g_tp.dram_wl.C_overlap = 0.2 * g_tp.dram_wl.C_g_ideal; - double gmn_sense_amp_latch = (mobility_eff_periph_global / 2) * g_tp.peri_global.C_ox * (g_tp.w_sense_n / g_tp.peri_global.l_elec) * Vdsat_periph_global; - double gmp_sense_amp_latch = gmp_to_gmn_multiplier_periph_global * gmn_sense_amp_latch; + double gmn_sense_amp_latch = + (mobility_eff_periph_global / 2) * g_tp.peri_global.C_ox * + (g_tp.w_sense_n / g_tp.peri_global.l_elec) * Vdsat_periph_global; + double gmp_sense_amp_latch = + gmp_to_gmn_multiplier_periph_global * gmn_sense_amp_latch; g_tp.gm_sense_amp_latch = gmn_sense_amp_latch + gmp_sense_amp_latch; g_tp.dram.b_w = sqrt(area_cell_dram / (asp_ratio_cell_dram)); g_tp.dram.b_h = asp_ratio_cell_dram * g_tp.dram.b_w; g_tp.sram.b_w = sqrt(area_cell_sram / (asp_ratio_cell_sram)); g_tp.sram.b_h = asp_ratio_cell_sram * g_tp.sram.b_w; - g_tp.cam.b_w = sqrt(area_cell_cam / (asp_ratio_cell_cam));//Sheng + g_tp.cam.b_w = sqrt(area_cell_cam / (asp_ratio_cell_cam)); // Sheng g_tp.cam.b_h = asp_ratio_cell_cam * g_tp.cam.b_w; g_tp.dram.Vbitpre = g_tp.dram_cell_Vdd; g_tp.sram.Vbitpre = vdd[ram_cell_tech_type]; - g_tp.cam.Vbitpre = vdd[ram_cell_tech_type];//Sheng + g_tp.cam.Vbitpre = vdd[ram_cell_tech_type]; // Sheng pmos_to_nmos_sizing_r = pmos_to_nmos_sz_ratio(); g_tp.w_pmos_bl_precharge = 6 * pmos_to_nmos_sizing_r * g_tp.min_w_nmos_; g_tp.w_pmos_bl_eq = pmos_to_nmos_sizing_r * g_tp.min_w_nmos_; + double wire_pitch[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], + wire_r_per_micron[NUMBER_INTERCONNECT_PROJECTION_TYPES] + [NUMBER_WIRE_TYPES], + wire_c_per_micron[NUMBER_INTERCONNECT_PROJECTION_TYPES] + [NUMBER_WIRE_TYPES], + horiz_dielectric_constant[NUMBER_INTERCONNECT_PROJECTION_TYPES] + [NUMBER_WIRE_TYPES], + vert_dielectric_constant[NUMBER_INTERCONNECT_PROJECTION_TYPES] + [NUMBER_WIRE_TYPES], + aspect_ratio[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], + miller_value[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], + ild_thickness[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES]; - double wire_pitch [NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - wire_r_per_micron[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - wire_c_per_micron[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - horiz_dielectric_constant[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - vert_dielectric_constant[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - aspect_ratio[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - miller_value[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES], - ild_thickness[NUMBER_INTERCONNECT_PROJECTION_TYPES][NUMBER_WIRE_TYPES]; - - for (iter=0; iter<=1; ++iter) - { + for (iter = 0; iter <= 1; ++iter) { // linear interpolation - if (iter == 0) - { + if (iter == 0) { tech = tech_lo; - if (tech_lo == tech_hi) - { + if (tech_lo == tech_hi) { curr_alpha = 1; + } else { + curr_alpha = (technology - tech_hi) / (tech_lo - tech_hi); } - else - { - curr_alpha = (technology - tech_hi)/(tech_lo - tech_hi); - } - } - else - { + } else { tech = tech_hi; - if (tech_lo == tech_hi) - { + if (tech_lo == tech_hi) { break; - } - else - { - curr_alpha = (tech_lo - technology)/(tech_lo - tech_hi); + } else { + curr_alpha = (tech_lo - technology) / (tech_lo - tech_hi); } } - if (tech == 90) - { - //Aggressive projections - wire_pitch[0][0] = 2.5 * g_ip->F_sz_um;//micron + if (tech == 90) { + // Aggressive projections + wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; // micron aspect_ratio[0][0] = 2.4; - wire_width = wire_pitch[0][0] / 2; //micron - wire_thickness = aspect_ratio[0][0] * wire_width;//micron - wire_spacing = wire_pitch[0][0] - wire_width;//micron - barrier_thickness = 0.01;//micron - dishing_thickness = 0;//micron + wire_width = wire_pitch[0][0] / 2; // micron + wire_thickness = aspect_ratio[0][0] * wire_width; // micron + wire_spacing = wire_pitch[0][0] - wire_width; // micron + barrier_thickness = 0.01; // micron + dishing_thickness = 0; // micron alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter);//ohm/micron - ild_thickness[0][0] = 0.48;//micron + wire_r_per_micron[0][0] = wire_resistance( + CU_RESISTIVITY, wire_width, wire_thickness, barrier_thickness, + dishing_thickness, alpha_scatter); // ohm/micron + ild_thickness[0][0] = 0.48; // micron miller_value[0][0] = 1.5; horiz_dielectric_constant[0][0] = 2.709; vert_dielectric_constant[0][0] = 3.9; - fringe_cap = 0.115e-15; //F/micron - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0], miller_value[0][0], horiz_dielectric_constant[0][0], + fringe_cap = 0.115e-15; // F/micron + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], vert_dielectric_constant[0][0], - fringe_cap);//F/micron. + fringe_cap); // F/micron. wire_pitch[0][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[0][1] / 2; aspect_ratio[0][1] = 2.4; wire_thickness = aspect_ratio[0][1] * wire_width; wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][1] = 0.48;//micron + wire_r_per_micron[0][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][1] = 0.48; // micron miller_value[0][1] = 1.5; horiz_dielectric_constant[0][1] = 2.709; vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], - vert_dielectric_constant[0][1], - fringe_cap); + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); wire_pitch[0][2] = 8 * g_ip->F_sz_um; aspect_ratio[0][2] = 2.7; wire_width = wire_pitch[0][2] / 2; wire_thickness = aspect_ratio[0][2] * wire_width; wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][2] = 0.96; miller_value[0][2] = 1.5; horiz_dielectric_constant[0][2] = 2.709; vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections + // Conservative projections wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; - aspect_ratio[1][0] = 2.0; + aspect_ratio[1][0] = 2.0; wire_width = wire_pitch[1][0] / 2; wire_thickness = aspect_ratio[1][0] * wire_width; wire_spacing = wire_pitch[1][0] - wire_width; barrier_thickness = 0.008; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][0] = 0.48; - miller_value[1][0] = 1.5; - horiz_dielectric_constant[1][0] = 3.038; - vert_dielectric_constant[1][0] = 3.9; + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][0] = 0.48; + miller_value[1][0] = 1.5; + horiz_dielectric_constant[1][0] = 3.038; + vert_dielectric_constant[1][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], - vert_dielectric_constant[1][0], - fringe_cap); + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); wire_pitch[1][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[1][1] / 2; aspect_ratio[1][1] = 2.0; wire_thickness = aspect_ratio[1][1] * wire_width; wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][1] = 0.48; - miller_value[1][1] = 1.5; - horiz_dielectric_constant[1][1] = 3.038; - vert_dielectric_constant[1][1] = 3.9; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], - vert_dielectric_constant[1][1], - fringe_cap); + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][1] = 0.48; + miller_value[1][1] = 1.5; + horiz_dielectric_constant[1][1] = 3.038; + vert_dielectric_constant[1][1] = 3.9; + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); wire_pitch[1][2] = 8 * g_ip->F_sz_um; - aspect_ratio[1][2] = 2.2; + aspect_ratio[1][2] = 2.2; wire_width = wire_pitch[1][2] / 2; wire_thickness = aspect_ratio[1][2] * wire_width; wire_spacing = wire_pitch[1][2] - wire_width; - dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][2] = 1.1; - miller_value[1][2] = 1.5; - horiz_dielectric_constant[1][2] = 3.038; - vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2] , miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline + dishing_thickness = 0.1 * wire_thickness; + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][2] = 1.1; + miller_value[1][2] = 1.5; + horiz_dielectric_constant[1][2] = 3.038; + vert_dielectric_constant[1][2] = 3.9; + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline wire_pitch[1][3] = 2 * 0.09; wire_c_per_micron[1][3] = 60e-15 / (256 * 2 * 0.09); wire_r_per_micron[1][3] = 12 / 0.09; - } - else if (tech == 65) - { - //Aggressive projections + } else if (tech == 65) { + // Aggressive projections wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; - aspect_ratio[0][0] = 2.7; + aspect_ratio[0][0] = 2.7; wire_width = wire_pitch[0][0] / 2; - wire_thickness = aspect_ratio[0][0] * wire_width; + wire_thickness = aspect_ratio[0][0] * wire_width; wire_spacing = wire_pitch[0][0] - wire_width; barrier_thickness = 0; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][0] = 0.405; - miller_value[0][0] = 1.5; - horiz_dielectric_constant[0][0] = 2.303; - vert_dielectric_constant[0][0] = 3.9; + wire_r_per_micron[0][0] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][0] = 0.405; + miller_value[0][0] = 1.5; + horiz_dielectric_constant[0][0] = 2.303; + vert_dielectric_constant[0][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0] , miller_value[0][0] , horiz_dielectric_constant[0][0] , vert_dielectric_constant[0][0] , - fringe_cap); + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], + vert_dielectric_constant[0][0], fringe_cap); wire_pitch[0][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[0][1] / 2; - aspect_ratio[0][1] = 2.7; - wire_thickness = aspect_ratio[0][1] * wire_width; + aspect_ratio[0][1] = 2.7; + wire_thickness = aspect_ratio[0][1] * wire_width; wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][1] = 0.405; - miller_value[0][1] = 1.5; - horiz_dielectric_constant[0][1] = 2.303; - vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], - vert_dielectric_constant[0][1], - fringe_cap); + wire_r_per_micron[0][1] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][1] = 0.405; + miller_value[0][1] = 1.5; + horiz_dielectric_constant[0][1] = 2.303; + vert_dielectric_constant[0][1] = 3.9; + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); wire_pitch[0][2] = 8 * g_ip->F_sz_um; aspect_ratio[0][2] = 2.8; wire_width = wire_pitch[0][2] / 2; wire_thickness = aspect_ratio[0][2] * wire_width; wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][2] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][2] = 0.81; - miller_value[0][2] = 1.5; - horiz_dielectric_constant[0][2] = 2.303; - vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + miller_value[0][2] = 1.5; + horiz_dielectric_constant[0][2] = 2.303; + vert_dielectric_constant[0][2] = 3.9; + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections + // Conservative projections wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; aspect_ratio[1][0] = 2.0; wire_width = wire_pitch[1][0] / 2; @@ -2085,105 +2170,115 @@ void init_tech_params(double technology, bool is_tag) barrier_thickness = 0.006; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][0] = 0.405; miller_value[1][0] = 1.5; horiz_dielectric_constant[1][0] = 2.734; vert_dielectric_constant[1][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], vert_dielectric_constant[1][0], - fringe_cap); + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); wire_pitch[1][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[1][1] / 2; aspect_ratio[1][1] = 2.0; wire_thickness = aspect_ratio[1][1] * wire_width; wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][1] = 0.405; miller_value[1][1] = 1.5; horiz_dielectric_constant[1][1] = 2.734; vert_dielectric_constant[1][1] = 3.9; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], vert_dielectric_constant[1][1], - fringe_cap); + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); wire_pitch[1][2] = 8 * g_ip->F_sz_um; aspect_ratio[1][2] = 2.2; wire_width = wire_pitch[1][2] / 2; wire_thickness = aspect_ratio[1][2] * wire_width; wire_spacing = wire_pitch[1][2] - wire_width; - dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + dishing_thickness = 0.1 * wire_thickness; + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][2] = 0.77; miller_value[1][2] = 1.5; horiz_dielectric_constant[1][2] = 2.734; vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2], miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline wire_pitch[1][3] = 2 * 0.065; wire_c_per_micron[1][3] = 52.5e-15 / (256 * 2 * 0.065); wire_r_per_micron[1][3] = 12 / 0.065; - } - else if (tech == 45) - { - //Aggressive projections. + } else if (tech == 45) { + // Aggressive projections. wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; - aspect_ratio[0][0] = 3.0; + aspect_ratio[0][0] = 3.0; wire_width = wire_pitch[0][0] / 2; - wire_thickness = aspect_ratio[0][0] * wire_width; + wire_thickness = aspect_ratio[0][0] * wire_width; wire_spacing = wire_pitch[0][0] - wire_width; barrier_thickness = 0; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][0] = 0.315; - miller_value[0][0] = 1.5; - horiz_dielectric_constant[0][0] = 1.958; - vert_dielectric_constant[0][0] = 3.9; + wire_r_per_micron[0][0] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][0] = 0.315; + miller_value[0][0] = 1.5; + horiz_dielectric_constant[0][0] = 1.958; + vert_dielectric_constant[0][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0] , miller_value[0][0] , horiz_dielectric_constant[0][0] , vert_dielectric_constant[0][0] , - fringe_cap); + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], + vert_dielectric_constant[0][0], fringe_cap); wire_pitch[0][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[0][1] / 2; - aspect_ratio[0][1] = 3.0; + aspect_ratio[0][1] = 3.0; wire_thickness = aspect_ratio[0][1] * wire_width; wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][1] = 0.315; - miller_value[0][1] = 1.5; - horiz_dielectric_constant[0][1] = 1.958; - vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], vert_dielectric_constant[0][1], - fringe_cap); + wire_r_per_micron[0][1] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][1] = 0.315; + miller_value[0][1] = 1.5; + horiz_dielectric_constant[0][1] = 1.958; + vert_dielectric_constant[0][1] = 3.9; + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); wire_pitch[0][2] = 8 * g_ip->F_sz_um; aspect_ratio[0][2] = 3.0; wire_width = wire_pitch[0][2] / 2; wire_thickness = aspect_ratio[0][2] * wire_width; wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][2] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][2] = 0.63; - miller_value[0][2] = 1.5; - horiz_dielectric_constant[0][2] = 1.958; - vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + miller_value[0][2] = 1.5; + horiz_dielectric_constant[0][2] = 1.958; + vert_dielectric_constant[0][2] = 3.9; + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections + // Conservative projections wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; aspect_ratio[1][0] = 2.0; wire_width = wire_pitch[1][0] / 2; @@ -2192,32 +2287,36 @@ void init_tech_params(double technology, bool is_tag) barrier_thickness = 0.004; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][0] = 0.315; miller_value[1][0] = 1.5; horiz_dielectric_constant[1][0] = 2.46; vert_dielectric_constant[1][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], vert_dielectric_constant[1][0], - fringe_cap); + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); wire_pitch[1][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[1][1] / 2; aspect_ratio[1][1] = 2.0; wire_thickness = aspect_ratio[1][1] * wire_width; wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][1] = 0.315; miller_value[1][1] = 1.5; horiz_dielectric_constant[1][1] = 2.46; vert_dielectric_constant[1][1] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], vert_dielectric_constant[1][1], - fringe_cap); + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); wire_pitch[1][2] = 8 * g_ip->F_sz_um; aspect_ratio[1][2] = 2.2; @@ -2225,23 +2324,23 @@ void init_tech_params(double technology, bool is_tag) wire_thickness = aspect_ratio[1][2] * wire_width; wire_spacing = wire_pitch[1][2] - wire_width; dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][2] = 0.55; miller_value[1][2] = 1.5; horiz_dielectric_constant[1][2] = 2.46; vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2], miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline wire_pitch[1][3] = 2 * 0.045; wire_c_per_micron[1][3] = 37.5e-15 / (256 * 2 * 0.045); wire_r_per_micron[1][3] = 12 / 0.045; - } - else if (tech == 32) - { - //Aggressive projections. + } else if (tech == 32) { + // Aggressive projections. wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; aspect_ratio[0][0] = 3.0; wire_width = wire_pitch[0][0] / 2; @@ -2250,48 +2349,54 @@ void init_tech_params(double technology, bool is_tag) barrier_thickness = 0; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][0] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][0] = 0.21; miller_value[0][0] = 1.5; horiz_dielectric_constant[0][0] = 1.664; vert_dielectric_constant[0][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0], miller_value[0][0], horiz_dielectric_constant[0][0], vert_dielectric_constant[0][0], - fringe_cap); + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], + vert_dielectric_constant[0][0], fringe_cap); wire_pitch[0][1] = 4 * g_ip->F_sz_um; wire_width = wire_pitch[0][1] / 2; aspect_ratio[0][1] = 3.0; wire_thickness = aspect_ratio[0][1] * wire_width; wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][1] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][1] = 0.21; miller_value[0][1] = 1.5; horiz_dielectric_constant[0][1] = 1.664; vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], vert_dielectric_constant[0][1], - fringe_cap); + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); wire_pitch[0][2] = 8 * g_ip->F_sz_um; aspect_ratio[0][2] = 3.0; wire_width = wire_pitch[0][2] / 2; wire_thickness = aspect_ratio[0][2] * wire_width; wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[0][2] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[0][2] = 0.42; miller_value[0][2] = 1.5; horiz_dielectric_constant[0][2] = 1.664; vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections + // Conservative projections wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; aspect_ratio[1][0] = 2.0; wire_width = wire_pitch[1][0] / 2; @@ -2300,460 +2405,579 @@ void init_tech_params(double technology, bool is_tag) barrier_thickness = 0.003; dishing_thickness = 0; alpha_scatter = 1; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][0] = 0.21; miller_value[1][0] = 1.5; horiz_dielectric_constant[1][0] = 2.214; vert_dielectric_constant[1][0] = 3.9; fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], vert_dielectric_constant[1][0], - fringe_cap); + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); wire_pitch[1][1] = 4 * g_ip->F_sz_um; aspect_ratio[1][1] = 2.0; wire_width = wire_pitch[1][1] / 2; wire_thickness = aspect_ratio[1][1] * wire_width; wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][1] = 0.21; miller_value[1][1] = 1.5; horiz_dielectric_constant[1][1] = 2.214; vert_dielectric_constant[1][1] = 3.9; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], vert_dielectric_constant[1][1], - fringe_cap); + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); wire_pitch[1][2] = 8 * g_ip->F_sz_um; aspect_ratio[1][2] = 2.2; wire_width = wire_pitch[1][2] / 2; wire_thickness = aspect_ratio[1][2] * wire_width; wire_spacing = wire_pitch[1][2] - wire_width; - dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); + dishing_thickness = 0.1 * wire_thickness; + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); ild_thickness[1][2] = 0.385; miller_value[1][2] = 1.5; horiz_dielectric_constant[1][2] = 2.214; vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2], miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline - wire_pitch[1][3] = 2 * 0.032;//micron - wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.032);//F/micron - wire_r_per_micron[1][3] = 12 / 0.032;//ohm/micron - } - else if (tech == 22) - { - //Aggressive projections. - wire_pitch[0][0] = 2.5 * g_ip->F_sz_um;//local - aspect_ratio[0][0] = 3.0; - wire_width = wire_pitch[0][0] / 2; - wire_thickness = aspect_ratio[0][0] * wire_width; - wire_spacing = wire_pitch[0][0] - wire_width; - barrier_thickness = 0; - dishing_thickness = 0; - alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][0] = 0.15; - miller_value[0][0] = 1.5; - horiz_dielectric_constant[0][0] = 1.414; - vert_dielectric_constant[0][0] = 3.9; - fringe_cap = 0.115e-15; - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0], miller_value[0][0], horiz_dielectric_constant[0][0], vert_dielectric_constant[0][0], - fringe_cap); - - wire_pitch[0][1] = 4 * g_ip->F_sz_um;//semi-global - wire_width = wire_pitch[0][1] / 2; - aspect_ratio[0][1] = 3.0; - wire_thickness = aspect_ratio[0][1] * wire_width; - wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][1] = 0.15; - miller_value[0][1] = 1.5; - horiz_dielectric_constant[0][1] = 1.414; - vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], vert_dielectric_constant[0][1], - fringe_cap); + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline + wire_pitch[1][3] = 2 * 0.032; // micron + wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.032); // F/micron + wire_r_per_micron[1][3] = 12 / 0.032; // ohm/micron + } else if (tech == 22) { + // Aggressive projections. + wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; // local + aspect_ratio[0][0] = 3.0; + wire_width = wire_pitch[0][0] / 2; + wire_thickness = aspect_ratio[0][0] * wire_width; + wire_spacing = wire_pitch[0][0] - wire_width; + barrier_thickness = 0; + dishing_thickness = 0; + alpha_scatter = 1; + wire_r_per_micron[0][0] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][0] = 0.15; + miller_value[0][0] = 1.5; + horiz_dielectric_constant[0][0] = 1.414; + vert_dielectric_constant[0][0] = 3.9; + fringe_cap = 0.115e-15; + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], + vert_dielectric_constant[0][0], fringe_cap); - wire_pitch[0][2] = 8 * g_ip->F_sz_um;//global - aspect_ratio[0][2] = 3.0; - wire_width = wire_pitch[0][2] / 2; - wire_thickness = aspect_ratio[0][2] * wire_width; - wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][2] = 0.3; - miller_value[0][2] = 1.5; - horiz_dielectric_constant[0][2] = 1.414; - vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + wire_pitch[0][1] = 4 * g_ip->F_sz_um; // semi-global + wire_width = wire_pitch[0][1] / 2; + aspect_ratio[0][1] = 3.0; + wire_thickness = aspect_ratio[0][1] * wire_width; + wire_spacing = wire_pitch[0][1] - wire_width; + wire_r_per_micron[0][1] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][1] = 0.15; + miller_value[0][1] = 1.5; + horiz_dielectric_constant[0][1] = 1.414; + vert_dielectric_constant[0][1] = 3.9; + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); -// //************************* -// wire_pitch[0][4] = 16 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][4] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][4] - wire_width; -// wire_r_per_micron[0][4] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][4] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[0][5] = 24 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][5] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][5] - wire_width; -// wire_r_per_micron[0][5] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][5] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[0][6] = 32 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][6] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][6] - wire_width; -// wire_r_per_micron[0][6] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][6] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); - //************************* + wire_pitch[0][2] = 8 * g_ip->F_sz_um; // global + aspect_ratio[0][2] = 3.0; + wire_width = wire_pitch[0][2] / 2; + wire_thickness = aspect_ratio[0][2] * wire_width; + wire_spacing = wire_pitch[0][2] - wire_width; + wire_r_per_micron[0][2] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][2] = 0.3; + miller_value[0][2] = 1.5; + horiz_dielectric_constant[0][2] = 1.414; + vert_dielectric_constant[0][2] = 3.9; + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections - wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; - aspect_ratio[1][0] = 2.0; - wire_width = wire_pitch[1][0] / 2; - wire_thickness = aspect_ratio[1][0] * wire_width; - wire_spacing = wire_pitch[1][0] - wire_width; - barrier_thickness = 0.003; - dishing_thickness = 0; - alpha_scatter = 1.05; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][0] = 0.15; - miller_value[1][0] = 1.5; - horiz_dielectric_constant[1][0] = 2.104; - vert_dielectric_constant[1][0] = 3.9; - fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], vert_dielectric_constant[1][0], - fringe_cap); + // //************************* + // wire_pitch[0][4] = 16 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][4] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][4] - wire_width; + // wire_r_per_micron[0][4] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][4] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[0][5] = 24 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][5] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][5] - wire_width; + // wire_r_per_micron[0][5] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][5] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[0][6] = 32 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][6] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][6] - wire_width; + // wire_r_per_micron[0][6] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][6] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + //************************* - wire_pitch[1][1] = 4 * g_ip->F_sz_um; - wire_width = wire_pitch[1][1] / 2; - aspect_ratio[1][1] = 2.0; - wire_thickness = aspect_ratio[1][1] * wire_width; - wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][1] = 0.15; - miller_value[1][1] = 1.5; - horiz_dielectric_constant[1][1] = 2.104; - vert_dielectric_constant[1][1] = 3.9; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], vert_dielectric_constant[1][1], - fringe_cap); + // Conservative projections + wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; + aspect_ratio[1][0] = 2.0; + wire_width = wire_pitch[1][0] / 2; + wire_thickness = aspect_ratio[1][0] * wire_width; + wire_spacing = wire_pitch[1][0] - wire_width; + barrier_thickness = 0.003; + dishing_thickness = 0; + alpha_scatter = 1.05; + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][0] = 0.15; + miller_value[1][0] = 1.5; + horiz_dielectric_constant[1][0] = 2.104; + vert_dielectric_constant[1][0] = 3.9; + fringe_cap = 0.115e-15; + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); - wire_pitch[1][2] = 8 * g_ip->F_sz_um; - aspect_ratio[1][2] = 2.2; - wire_width = wire_pitch[1][2] / 2; - wire_thickness = aspect_ratio[1][2] * wire_width; - wire_spacing = wire_pitch[1][2] - wire_width; - dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][2] = 0.275; - miller_value[1][2] = 1.5; - horiz_dielectric_constant[1][2] = 2.104; - vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2], miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline - wire_pitch[1][3] = 2 * 0.022;//micron - wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.022);//F/micron - wire_r_per_micron[1][3] = 12 / 0.022;//ohm/micron + wire_pitch[1][1] = 4 * g_ip->F_sz_um; + wire_width = wire_pitch[1][1] / 2; + aspect_ratio[1][1] = 2.0; + wire_thickness = aspect_ratio[1][1] * wire_width; + wire_spacing = wire_pitch[1][1] - wire_width; + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][1] = 0.15; + miller_value[1][1] = 1.5; + horiz_dielectric_constant[1][1] = 2.104; + vert_dielectric_constant[1][1] = 3.9; + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); - //****************** -// wire_pitch[1][4] = 16 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][4] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][4] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][4] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][4] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[1][5] = 24 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][5] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][5] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][5] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][5] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[1][6] = 32 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][6] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][6] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][6] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][6] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); - } + wire_pitch[1][2] = 8 * g_ip->F_sz_um; + aspect_ratio[1][2] = 2.2; + wire_width = wire_pitch[1][2] / 2; + wire_thickness = aspect_ratio[1][2] * wire_width; + wire_spacing = wire_pitch[1][2] - wire_width; + dishing_thickness = 0.1 * wire_thickness; + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][2] = 0.275; + miller_value[1][2] = 1.5; + horiz_dielectric_constant[1][2] = 2.104; + vert_dielectric_constant[1][2] = 3.9; + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline + wire_pitch[1][3] = 2 * 0.022; // micron + wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.022); // F/micron + wire_r_per_micron[1][3] = 12 / 0.022; // ohm/micron - else if (tech == 16) - { - //Aggressive projections. - wire_pitch[0][0] = 2.5 * g_ip->F_sz_um;//local - aspect_ratio[0][0] = 3.0; - wire_width = wire_pitch[0][0] / 2; - wire_thickness = aspect_ratio[0][0] * wire_width; - wire_spacing = wire_pitch[0][0] - wire_width; - barrier_thickness = 0; - dishing_thickness = 0; - alpha_scatter = 1; - wire_r_per_micron[0][0] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][0] = 0.108; - miller_value[0][0] = 1.5; - horiz_dielectric_constant[0][0] = 1.202; - vert_dielectric_constant[0][0] = 3.9; - fringe_cap = 0.115e-15; - wire_c_per_micron[0][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][0], miller_value[0][0], horiz_dielectric_constant[0][0], vert_dielectric_constant[0][0], - fringe_cap); + //****************** + // wire_pitch[1][4] = 16 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][4] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][4] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][4] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][4] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[1][5] = 24 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][5] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][5] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][5] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][5] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[1][6] = 32 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][6] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][6] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][6] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][6] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + } - wire_pitch[0][1] = 4 * g_ip->F_sz_um;//semi-global - aspect_ratio[0][1] = 3.0; - wire_width = wire_pitch[0][1] / 2; - wire_thickness = aspect_ratio[0][1] * wire_width; - wire_spacing = wire_pitch[0][1] - wire_width; - wire_r_per_micron[0][1] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][1] = 0.108; - miller_value[0][1] = 1.5; - horiz_dielectric_constant[0][1] = 1.202; - vert_dielectric_constant[0][1] = 3.9; - wire_c_per_micron[0][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][1], miller_value[0][1], horiz_dielectric_constant[0][1], vert_dielectric_constant[0][1], - fringe_cap); + else if (tech == 16) { + // Aggressive projections. + wire_pitch[0][0] = 2.5 * g_ip->F_sz_um; // local + aspect_ratio[0][0] = 3.0; + wire_width = wire_pitch[0][0] / 2; + wire_thickness = aspect_ratio[0][0] * wire_width; + wire_spacing = wire_pitch[0][0] - wire_width; + barrier_thickness = 0; + dishing_thickness = 0; + alpha_scatter = 1; + wire_r_per_micron[0][0] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][0] = 0.108; + miller_value[0][0] = 1.5; + horiz_dielectric_constant[0][0] = 1.202; + vert_dielectric_constant[0][0] = 3.9; + fringe_cap = 0.115e-15; + wire_c_per_micron[0][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][0], + miller_value[0][0], horiz_dielectric_constant[0][0], + vert_dielectric_constant[0][0], fringe_cap); - wire_pitch[0][2] = 8 * g_ip->F_sz_um;//global - aspect_ratio[0][2] = 3.0; - wire_width = wire_pitch[0][2] / 2; - wire_thickness = aspect_ratio[0][2] * wire_width; - wire_spacing = wire_pitch[0][2] - wire_width; - wire_r_per_micron[0][2] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[0][2] = 0.216; - miller_value[0][2] = 1.5; - horiz_dielectric_constant[0][2] = 1.202; - vert_dielectric_constant[0][2] = 3.9; - wire_c_per_micron[0][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[0][2], miller_value[0][2], horiz_dielectric_constant[0][2], vert_dielectric_constant[0][2], - fringe_cap); + wire_pitch[0][1] = 4 * g_ip->F_sz_um; // semi-global + aspect_ratio[0][1] = 3.0; + wire_width = wire_pitch[0][1] / 2; + wire_thickness = aspect_ratio[0][1] * wire_width; + wire_spacing = wire_pitch[0][1] - wire_width; + wire_r_per_micron[0][1] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][1] = 0.108; + miller_value[0][1] = 1.5; + horiz_dielectric_constant[0][1] = 1.202; + vert_dielectric_constant[0][1] = 3.9; + wire_c_per_micron[0][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][1], + miller_value[0][1], horiz_dielectric_constant[0][1], + vert_dielectric_constant[0][1], fringe_cap); -// //************************* -// wire_pitch[0][4] = 16 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][4] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][4] - wire_width; -// wire_r_per_micron[0][4] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][4] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[0][5] = 24 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][5] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][5] - wire_width; -// wire_r_per_micron[0][5] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][5] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[0][6] = 32 * g_ip.F_sz_um;//global -// aspect_ratio = 3.0; -// wire_width = wire_pitch[0][6] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[0][6] - wire_width; -// wire_r_per_micron[0][6] = wire_resistance(BULK_CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.3; -// wire_c_per_micron[0][6] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); - //************************* + wire_pitch[0][2] = 8 * g_ip->F_sz_um; // global + aspect_ratio[0][2] = 3.0; + wire_width = wire_pitch[0][2] / 2; + wire_thickness = aspect_ratio[0][2] * wire_width; + wire_spacing = wire_pitch[0][2] - wire_width; + wire_r_per_micron[0][2] = + wire_resistance(BULK_CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[0][2] = 0.216; + miller_value[0][2] = 1.5; + horiz_dielectric_constant[0][2] = 1.202; + vert_dielectric_constant[0][2] = 3.9; + wire_c_per_micron[0][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[0][2], + miller_value[0][2], horiz_dielectric_constant[0][2], + vert_dielectric_constant[0][2], fringe_cap); - //Conservative projections - wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; - aspect_ratio[1][0] = 2.0; - wire_width = wire_pitch[1][0] / 2; - wire_thickness = aspect_ratio[1][0] * wire_width; - wire_spacing = wire_pitch[1][0] - wire_width; - barrier_thickness = 0.002; - dishing_thickness = 0; - alpha_scatter = 1.05; - wire_r_per_micron[1][0] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][0] = 0.108; - miller_value[1][0] = 1.5; - horiz_dielectric_constant[1][0] = 1.998; - vert_dielectric_constant[1][0] = 3.9; - fringe_cap = 0.115e-15; - wire_c_per_micron[1][0] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][0], miller_value[1][0], horiz_dielectric_constant[1][0], vert_dielectric_constant[1][0], - fringe_cap); + // //************************* + // wire_pitch[0][4] = 16 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][4] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][4] - wire_width; + // wire_r_per_micron[0][4] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][4] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[0][5] = 24 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][5] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][5] - wire_width; + // wire_r_per_micron[0][5] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][5] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[0][6] = 32 * g_ip.F_sz_um;//global + // aspect_ratio = 3.0; + // wire_width = wire_pitch[0][6] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[0][6] - wire_width; + // wire_r_per_micron[0][6] = wire_resistance(BULK_CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.3; + // wire_c_per_micron[0][6] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + //************************* - wire_pitch[1][1] = 4 * g_ip->F_sz_um; - wire_width = wire_pitch[1][1] / 2; - aspect_ratio[1][1] = 2.0; - wire_thickness = aspect_ratio[1][1] * wire_width; - wire_spacing = wire_pitch[1][1] - wire_width; - wire_r_per_micron[1][1] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][1] = 0.108; - miller_value[1][1] = 1.5; - horiz_dielectric_constant[1][1] = 1.998; - vert_dielectric_constant[1][1] = 3.9; - wire_c_per_micron[1][1] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][1], miller_value[1][1], horiz_dielectric_constant[1][1], vert_dielectric_constant[1][1], - fringe_cap); + // Conservative projections + wire_pitch[1][0] = 2.5 * g_ip->F_sz_um; + aspect_ratio[1][0] = 2.0; + wire_width = wire_pitch[1][0] / 2; + wire_thickness = aspect_ratio[1][0] * wire_width; + wire_spacing = wire_pitch[1][0] - wire_width; + barrier_thickness = 0.002; + dishing_thickness = 0; + alpha_scatter = 1.05; + wire_r_per_micron[1][0] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][0] = 0.108; + miller_value[1][0] = 1.5; + horiz_dielectric_constant[1][0] = 1.998; + vert_dielectric_constant[1][0] = 3.9; + fringe_cap = 0.115e-15; + wire_c_per_micron[1][0] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][0], + miller_value[1][0], horiz_dielectric_constant[1][0], + vert_dielectric_constant[1][0], fringe_cap); - wire_pitch[1][2] = 8 * g_ip->F_sz_um; - aspect_ratio[1][2] = 2.2; - wire_width = wire_pitch[1][2] / 2; - wire_thickness = aspect_ratio[1][2] * wire_width; - wire_spacing = wire_pitch[1][2] - wire_width; - dishing_thickness = 0.1 * wire_thickness; - wire_r_per_micron[1][2] = wire_resistance(CU_RESISTIVITY, wire_width, - wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); - ild_thickness[1][2] = 0.198; - miller_value[1][2] = 1.5; - horiz_dielectric_constant[1][2] = 1.998; - vert_dielectric_constant[1][2] = 3.9; - wire_c_per_micron[1][2] = wire_capacitance(wire_width, wire_thickness, wire_spacing, - ild_thickness[1][2], miller_value[1][2], horiz_dielectric_constant[1][2], vert_dielectric_constant[1][2], - fringe_cap); - //Nominal projections for commodity DRAM wordline/bitline - wire_pitch[1][3] = 2 * 0.016;//micron - wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.016);//F/micron - wire_r_per_micron[1][3] = 12 / 0.016;//ohm/micron + wire_pitch[1][1] = 4 * g_ip->F_sz_um; + wire_width = wire_pitch[1][1] / 2; + aspect_ratio[1][1] = 2.0; + wire_thickness = aspect_ratio[1][1] * wire_width; + wire_spacing = wire_pitch[1][1] - wire_width; + wire_r_per_micron[1][1] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][1] = 0.108; + miller_value[1][1] = 1.5; + horiz_dielectric_constant[1][1] = 1.998; + vert_dielectric_constant[1][1] = 3.9; + wire_c_per_micron[1][1] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][1], + miller_value[1][1], horiz_dielectric_constant[1][1], + vert_dielectric_constant[1][1], fringe_cap); - //****************** -// wire_pitch[1][4] = 16 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][4] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][4] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][4] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][4] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[1][5] = 24 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][5] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][5] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][5] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][5] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); -// -// wire_pitch[1][6] = 32 * g_ip.F_sz_um; -// aspect_ratio = 2.2; -// wire_width = wire_pitch[1][6] / 2; -// wire_thickness = aspect_ratio * wire_width; -// wire_spacing = wire_pitch[1][6] - wire_width; -// dishing_thickness = 0.1 * wire_thickness; -// wire_r_per_micron[1][6] = wire_resistance(CU_RESISTIVITY, wire_width, -// wire_thickness, barrier_thickness, dishing_thickness, alpha_scatter); -// ild_thickness = 0.275; -// wire_c_per_micron[1][6] = wire_capacitance(wire_width, wire_thickness, wire_spacing, -// ild_thickness, miller_value, horiz_dielectric_constant, vert_dielectric_constant, -// fringe_cap); - } - g_tp.wire_local.pitch += curr_alpha * wire_pitch[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.R_per_um += curr_alpha * wire_r_per_micron[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.C_per_um += curr_alpha * wire_c_per_micron[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.aspect_ratio += curr_alpha * aspect_ratio[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.ild_thickness += curr_alpha * ild_thickness[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.miller_value += curr_alpha * miller_value[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.horiz_dielectric_constant += curr_alpha* horiz_dielectric_constant[g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; - g_tp.wire_local.vert_dielectric_constant += curr_alpha* vert_dielectric_constant [g_ip->ic_proj_type][(ram_cell_tech_type == comm_dram)?3:0]; + wire_pitch[1][2] = 8 * g_ip->F_sz_um; + aspect_ratio[1][2] = 2.2; + wire_width = wire_pitch[1][2] / 2; + wire_thickness = aspect_ratio[1][2] * wire_width; + wire_spacing = wire_pitch[1][2] - wire_width; + dishing_thickness = 0.1 * wire_thickness; + wire_r_per_micron[1][2] = + wire_resistance(CU_RESISTIVITY, wire_width, wire_thickness, + barrier_thickness, dishing_thickness, alpha_scatter); + ild_thickness[1][2] = 0.198; + miller_value[1][2] = 1.5; + horiz_dielectric_constant[1][2] = 1.998; + vert_dielectric_constant[1][2] = 3.9; + wire_c_per_micron[1][2] = wire_capacitance( + wire_width, wire_thickness, wire_spacing, ild_thickness[1][2], + miller_value[1][2], horiz_dielectric_constant[1][2], + vert_dielectric_constant[1][2], fringe_cap); + // Nominal projections for commodity DRAM wordline/bitline + wire_pitch[1][3] = 2 * 0.016; // micron + wire_c_per_micron[1][3] = 31e-15 / (256 * 2 * 0.016); // F/micron + wire_r_per_micron[1][3] = 12 / 0.016; // ohm/micron - g_tp.wire_inside_mat.pitch += curr_alpha * wire_pitch[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.R_per_um += curr_alpha* wire_r_per_micron[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.C_per_um += curr_alpha* wire_c_per_micron[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.aspect_ratio += curr_alpha * aspect_ratio[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.ild_thickness += curr_alpha * ild_thickness[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.miller_value += curr_alpha * miller_value[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.horiz_dielectric_constant += curr_alpha* horiz_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.wire_inside_mat.vert_dielectric_constant += curr_alpha* vert_dielectric_constant [g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + //****************** + // wire_pitch[1][4] = 16 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][4] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][4] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][4] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][4] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[1][5] = 24 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][5] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][5] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][5] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][5] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + // + // wire_pitch[1][6] = 32 * g_ip.F_sz_um; + // aspect_ratio = 2.2; + // wire_width = wire_pitch[1][6] / 2; + // wire_thickness = aspect_ratio * wire_width; + // wire_spacing = wire_pitch[1][6] - wire_width; + // dishing_thickness = 0.1 * wire_thickness; + // wire_r_per_micron[1][6] = wire_resistance(CU_RESISTIVITY, + // wire_width, + // wire_thickness, barrier_thickness, + // dishing_thickness, alpha_scatter); + // ild_thickness = 0.275; + // wire_c_per_micron[1][6] = wire_capacitance(wire_width, + // wire_thickness, wire_spacing, + // ild_thickness, miller_value, + // horiz_dielectric_constant, vert_dielectric_constant, + // fringe_cap); + } + g_tp.wire_local.pitch += + curr_alpha * wire_pitch[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.R_per_um += + curr_alpha * + wire_r_per_micron[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.C_per_um += + curr_alpha * + wire_c_per_micron[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.aspect_ratio += + curr_alpha * aspect_ratio[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.ild_thickness += + curr_alpha * ild_thickness[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.miller_value += + curr_alpha * miller_value[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.horiz_dielectric_constant += + curr_alpha * + horiz_dielectric_constant[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; + g_tp.wire_local.vert_dielectric_constant += + curr_alpha * + vert_dielectric_constant[g_ip->ic_proj_type] + [(ram_cell_tech_type == comm_dram) ? 3 : 0]; - g_tp.wire_outside_mat.pitch += curr_alpha * wire_pitch[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.R_per_um += curr_alpha*wire_r_per_micron[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.C_per_um += curr_alpha*wire_c_per_micron[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.aspect_ratio += curr_alpha * aspect_ratio[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.ild_thickness += curr_alpha * ild_thickness[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.miller_value += curr_alpha * miller_value[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.horiz_dielectric_constant += curr_alpha* horiz_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.wire_outside_mat.vert_dielectric_constant += curr_alpha* vert_dielectric_constant [g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_inside_mat.pitch += + curr_alpha * wire_pitch[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.R_per_um += + curr_alpha * + wire_r_per_micron[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.C_per_um += + curr_alpha * + wire_c_per_micron[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.aspect_ratio += + curr_alpha * aspect_ratio[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.ild_thickness += + curr_alpha * ild_thickness[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.miller_value += + curr_alpha * miller_value[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.horiz_dielectric_constant += + curr_alpha * + horiz_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; + g_tp.wire_inside_mat.vert_dielectric_constant += + curr_alpha * + vert_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_is_mat_type]; - g_tp.unit_len_wire_del = g_tp.wire_inside_mat.R_per_um * g_tp.wire_inside_mat.C_per_um / 2; + g_tp.wire_outside_mat.pitch += + curr_alpha * wire_pitch[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.R_per_um += + curr_alpha * + wire_r_per_micron[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.C_per_um += + curr_alpha * + wire_c_per_micron[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.aspect_ratio += + curr_alpha * aspect_ratio[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.ild_thickness += + curr_alpha * ild_thickness[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.miller_value += + curr_alpha * miller_value[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.horiz_dielectric_constant += + curr_alpha * + horiz_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; + g_tp.wire_outside_mat.vert_dielectric_constant += + curr_alpha * + vert_dielectric_constant[g_ip->ic_proj_type][g_ip->wire_os_mat_type]; - g_tp.sense_delay += curr_alpha *SENSE_AMP_D; - g_tp.sense_dy_power += curr_alpha *SENSE_AMP_P; -// g_tp.horiz_dielectric_constant += horiz_dielectric_constant; -// g_tp.vert_dielectric_constant += vert_dielectric_constant; -// g_tp.aspect_ratio += aspect_ratio; -// g_tp.miller_value += miller_value; -// g_tp.ild_thickness += ild_thickness; + g_tp.unit_len_wire_del = + g_tp.wire_inside_mat.R_per_um * g_tp.wire_inside_mat.C_per_um / 2; + g_tp.sense_delay += curr_alpha * SENSE_AMP_D; + g_tp.sense_dy_power += curr_alpha * SENSE_AMP_P; + // g_tp.horiz_dielectric_constant += horiz_dielectric_constant; + // g_tp.vert_dielectric_constant += vert_dielectric_constant; + // g_tp.aspect_ratio += aspect_ratio; + // g_tp.miller_value += miller_value; + // g_tp.ild_thickness += ild_thickness; } g_tp.fringe_cap = fringe_cap; @@ -2764,9 +2988,9 @@ void init_tech_params(double technology, bool is_tag) g_tp.kinv = horowitz(0, tf, 0.5, 0.5, RISE); double KLOAD = 1; c_load = KLOAD * (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) + - drain_C_(g_tp.min_w_nmos_ * p_to_n_sizing_r, PCH, 1, 1, g_tp.cell_h_def) + + drain_C_(g_tp.min_w_nmos_ * p_to_n_sizing_r, PCH, 1, 1, + g_tp.cell_h_def) + gate_C(g_tp.min_w_nmos_ * 4 * (1 + p_to_n_sizing_r), 0.0)); tf = rd * c_load; g_tp.FO4 = horowitz(0, tf, 0.5, 0.5, RISE); } - |